Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes

Recently tellurium (Te) has attracted resurgent interests due to its p-type characteristics and outstanding ambient environmental stability. Here we present a substrate engineering based physical vapor deposition method to synthesize high-quality Te nanoflakes and achieved a field-effect hole mobili...

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Published in:arXiv.org 2024-04
Main Authors: Huang, Tianyi, Sen, Lin, Zou, Jingyi, Wang, Zexiao, Zhong, Yibai, Li, Jingwei, Wang, Ruixuan, Wang, Han, Li, Qing, Xu, Min, Shen, Sheng, Zhang, Xu
Format: Article
Language:English
Subjects:
Heterojunctions
Heterostructures
Hole mobility
Molybdenum disulfide
Optoelectronics
P-type semiconductors
Photodiodes
Photometers
Physical vapor deposition
Substrates
Synthesis
Tellurium
Thickness
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Summary:Recently tellurium (Te) has attracted resurgent interests due to its p-type characteristics and outstanding ambient environmental stability. Here we present a substrate engineering based physical vapor deposition method to synthesize high-quality Te nanoflakes and achieved a field-effect hole mobility of 1500 cm2/Vs, which is, to the best of our knowledge, the highest among the existing synthesized van der Waals p-type semiconductors. The high mobility Te enables the fabrication of Te/MoS2 pn diodes with highly gate-tunable electronic and optoelectronic characteristics. The Te/MoS2 heterostructure can be used as a visible range photodetector with a current responsivity up to 630 A/W, which is about one order of magnitude higher than the one achieved using p-type Si-MoS2 PN photodiodes. The photo response of the Te/MoS2 heterojunction also exhibits strong gate tunability due to their ultrathin thickness and unique band structures. The successful synthesis of high mobility Te and the enabled Te/MoS2 photodiodes show promise for the development of highly tunable and ultrathin photodetectors.
ISSN:2331-8422