Third harmonic generation of a 12–6 GaAs/Ga1-xAlxAs double quantum well: effect of external fields

In this paper, we report the third harmonic generation in a 12–6 potential profile-shaped GaAs/Ga 1 - x Al x As double quantum well. We investigate the effects of the well width size and the presence of the external fields: electric, magnetic, and intense laser. The electronic structure is calculate...

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Bibliographic Details
Published in:European physical journal plus 2024-04, Vol.139 (4), p.359
Main Authors: Rodríguez-Magdaleno, K. A., Demir, M., Ungan, F., Nava-Maldonado, F. M., Martínez-Orozco, J. C.
Format: Article
Language:English
Subjects:
Applied and Technical Physics
Atomic
Complex Systems
Condensed Matter Physics
Electric fields
Electronic structure
Electrons
Gallium arsenide
Harmonic generations
Lasers
Magnetic fields
Magnetic properties
Mathematical and Computational Physics
Matrix methods
Molecular
Molecular beam epitaxy
Optical and Plasma Physics
Optical communication
Optical properties
Optoelectronic devices
Organic chemicals
Physics
Physics and Astronomy
Quantum dots
Quantum wells
Regular Article
Schrodinger equation
Spectrum analysis
Theoretical
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Summary:In this paper, we report the third harmonic generation in a 12–6 potential profile-shaped GaAs/Ga 1 - x Al x As double quantum well. We investigate the effects of the well width size and the presence of the external fields: electric, magnetic, and intense laser. The electronic structure is calculated within the effective mass approximation using a diagonalization method to solve the Schrödinger equation. The expression for third harmonic generation comes from the compact density matrix method. Our results show that the intense laser field effect strongly affects the optoelectronic properties; the electric field (well width) redshifts (blueshifts) the third harmonic generation peaks. Additionally, we observe that the magnetic field has a negligible impact on the studied properties for this potential profile. It is important to stress that the optical signal is in the THz range and that these results can be considered to design possible systems for THz radiation in optoelectronic devices.
ISSN:2190-5444
DOI:10.1140/epjp/s13360-024-05156-5