Third harmonic generation of a 12–6 GaAs/Ga1-xAlxAs double quantum well: effect of external fields

• Published in: European physical journal plus 2024-04, Vol.139 (4), p.359
• Main Authors: Rodríguez-Magdaleno, K. A., Demir, M., Ungan, F., Nava-Maldonado, F. M., Martínez-Orozco, J. C.
• Format: Article
• Language: English
• Subjects: Applied and Technical Physics; Atomic; Complex Systems; Condensed Matter Physics; Electric fields; Electronic structure; Electrons; Gallium arsenide; Harmonic generations; Lasers; Magnetic fields; Magnetic properties; Mathematical and Computational Physics; Matrix methods; Molecular; Molecular beam epitaxy; Optical and Plasma Physics; Optical communication; Optical properties; Optoelectronic devices; Organic chemicals; Physics; Physics and Astronomy; Quantum dots; Quantum wells; Regular Article; Schrodinger equation; Spectrum analysis; Theoretical
• ISSN: 2190-5444
• DOI: 10.1140/epjp/s13360-024-05156-5

In this paper, we report the third harmonic generation in a 12–6 potential profile-shaped GaAs/Ga 1 - x Al x As double quantum well. We investigate the effects of the well width size and the presence of the external fields: electric, magnetic, and intense laser. The electronic structure is calculated within the effective mass approximation using a diagonalization method to solve the Schrödinger equation. The expression for third harmonic generation comes from the compact density matrix method. Our results show that the intense laser field effect strongly affects the optoelectronic properties; the electric field (well width) redshifts (blueshifts) the third harmonic generation peaks. Additionally, we observe that the magnetic field has a negligible impact on the studied properties for this potential profile. It is important to stress that the optical signal is in the THz range and that these results can be considered to design possible systems for THz radiation in optoelectronic devices.