Effect of Temperature on the Electrical and Optical Properties of Silver (Ag) Assisted Electrochemically Etched Silicon Nanowires (SINWs)

The present work deals with the study of the effect of temperature on the Raman spectroscopy and electrical properties of the silicon nanowires. The nanowires are fabricated through silver assisted electrochemical etching process. Prior to these studies, the fabricated nanowires are characterized th...

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Bibliographic Details
Published in:Brazilian journal of physics 2024-08, Vol.54 (4), Article 100
Main Authors: Nath, P., Sarkar, D.
Format: Article
Language:English
Subjects:
Electrical properties
Electrochemical etching
Electron microscopy
Field emission microscopy
Low temperature
Microscopy
Nanowires
Optical properties
Physics
Physics and Astronomy
Raman spectroscopy
Silicon
Silver
Space charge
Temperature
Temperature dependence
Temperature effects
X-ray diffraction
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Summary:The present work deals with the study of the effect of temperature on the Raman spectroscopy and electrical properties of the silicon nanowires. The nanowires are fabricated through silver assisted electrochemical etching process. Prior to these studies, the fabricated nanowires are characterized through field emission scanning electron microscopy (FESEM), field emission transmission electron microscopy (FETEM), and X-ray diffraction (XRD) measurements. FESEM reveals the vertical alignment of the nanowires. FETEM indicates the materials to be highly crystalline, which is also complemented by the XRD result. Raman peak is blue-shifted with a decrease of temperature suggesting lattice disturbance at low temperature. Temperature-dependent current-voltage (I-V) measurements are fitted with Cheung’s model and the characteristic parameters viz. ideality factor ( n ), barrier height ( ϕ b ), and series resistance ( R s ) are estimated from the fitted plots. At lower temperatures, the value of n highly deviates from the ideal value of unity and is 23.42 at 110 K. The materials are observed to obey space charge limited conduction (SCLC) to trap charge limit current (TCLC) with increasing bias at lower temperatures.
ISSN:0103-9733
1678-4448
DOI:10.1007/s13538-024-01483-1