Alloy composition dependent built-in polarization fields and quantized carrier states in III-nitride multi-quantum well structures

In this paper, mole fraction dependent strain in a III-nitride alloy and its effects on built-in polarization and quantized states in multi-quantum-wells (MQWs) have been investigated. The internal electric field arising out of spontaneous and piezoelectric polarizations in the presence of strain ha...

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Bibliographic Details
Published in:Journal of applied physics 2024-05, Vol.135 (20)
Main Authors: Das, Nikhil Ranjan, Bandyopadhyay, Moubani
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Computation
Eigenvalues
Electric fields
Finite difference method
Gallium nitrides
Indium gallium nitrides
Multi Quantum Wells
Piezoelectricity
Polarization
Schrodinger equation
Valence band
Wave functions
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Summary:In this paper, mole fraction dependent strain in a III-nitride alloy and its effects on built-in polarization and quantized states in multi-quantum-wells (MQWs) have been investigated. The internal electric field arising out of spontaneous and piezoelectric polarizations in the presence of strain has been calculated. Then, the energy eigenvalues and wavefunctions of carriers in the modified potential well configurations have been computed by solving a time-independent Schrödinger equation using a finite difference method. Next, the overlap integrals between the wavefunctions of bound states in conduction and valence bands, an important consideration for optical transitions, have been computed and plotted. The results are shown taking three nitride-based MQW structures InGaN/GaN, GaN/AlGaN, and InGaN/InAlN as examples. The study helps choose suitable mole fractions for the improved and desired performance of the nitride MQW based devices.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0203312