Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe2 and n‐type MoS2

• Published in: Physica status solidi. A, Applications and materials science Applications and materials science, 2024-05, Vol.221 (10)
• Main Authors: Piacentini, Agata, Polyushkin, Dmitry K, Burkay Uzlu, Grundmann, Annika, Heuken, Michael, Kalisch, Holger, Vescan, Andrei, Wang, Zhenxing, Lemme, Max C, Mueller, Thomas, Neumaier, Daniel
• Format: Article
• Language: English
• Subjects: CMOS; Field effect transistors; High gain; Inverters; Molybdenum disulfide; Power consumption; Substrates; Thin films; Transition metal compounds; Two dimensional materials
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.202300913

Transition metal dichalcogenides (TMDCs) are a promising class of two‐dimensional (2D) materials for flexible electronic applications due to their low integration temperature, good electronic properties, and excellent mechanical flexibility. Moreover, TMDCs offer the possibility of co‐integrating both n‐ and p‐type transistors on the same substrate, enabling the realization of complementary metal‐oxide‐semiconductor (CMOS) circuits. In this study, n‐type MoS2 field‐effect transistors (FETs), and p‐type WSe2‐FETs integrated on a flexible foil substrate fabricated by standard thin‐film technology are presented. These devices exhibit high stability in their electronic operation under strain and repeated bending cycles. A CMOS inverter based on these transistors is also successfully demonstrated, which shows excellent switching behaviour with high gain (up to 100), high noise margin (0.87 · VDD), and low average static power consumption (40 pW).