Formation of ohmic contacts on heavily Al+-implanted p-type SiC without an alloying process

The current–voltage ( I – V ) characteristics and contact resistivity ( ρ c ) of Ni electrodes formed on heavily Al + -implanted p-type SiC without an alloying process were investigated. A nearly ohmic I – V curve with a ρ c of 9.3 × 10 −2 Ωcm 2 was demonstrated for non-alloyed Ni electrodes by very...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2024-05, Vol.63 (5), p.50903
Main Authors: Kuwahara, Kotaro, Kitawaki, Takeaki, Hara, Masahiro, Kaneko, Mitsuaki, Kimoto, Tsunenobu
Format: Article
Language:English
Subjects:
activation ratio
Al implantation
Alloying
Aluminum
Contact resistance
Current voltage characteristics
Electrodes
Nickel
ohmic contacts
p-type SiC
schottky barrier diodes
SiC
tunneling current
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Summary:The current–voltage ( I – V ) characteristics and contact resistivity ( ρ c ) of Ni electrodes formed on heavily Al + -implanted p-type SiC without an alloying process were investigated. A nearly ohmic I – V curve with a ρ c of 9.3 × 10 −2 Ωcm 2 was demonstrated for non-alloyed Ni electrodes by very high-dose Al + implantation (3.1 × 10 20 cm −3 ). The dependence of the experimental ρ c on net acceptor density ( N A ) can be described by a change in the contribution of direct tunneling and trap-assisted tunneling.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ad43cf