Loading…
Formation of ohmic contacts on heavily Al+-implanted p-type SiC without an alloying process
The current–voltage ( I – V ) characteristics and contact resistivity ( ρ c ) of Ni electrodes formed on heavily Al + -implanted p-type SiC without an alloying process were investigated. A nearly ohmic I – V curve with a ρ c of 9.3 × 10 −2 Ωcm 2 was demonstrated for non-alloyed Ni electrodes by very...
Saved in:
| Published in: | Japanese Journal of Applied Physics 2024-05, Vol.63 (5), p.50903 |
|---|---|
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | |
|---|---|
| cites | cdi_FETCH-LOGICAL-c226t-22e94594b3a31046ec95eb9ad116eefc45991de8165ce7b27d6bd388572f7733 |
| container_end_page | |
| container_issue | 5 |
| container_start_page | 50903 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 63 |
| creator | Kuwahara, Kotaro Kitawaki, Takeaki Hara, Masahiro Kaneko, Mitsuaki Kimoto, Tsunenobu |
| description | The current–voltage (
I
–
V
) characteristics and contact resistivity (
ρ
c
) of Ni electrodes formed on heavily Al
+
-implanted p-type SiC without an alloying process were investigated. A nearly ohmic
I
–
V
curve with a
ρ
c
of 9.3 × 10
−2
Ωcm
2
was demonstrated for non-alloyed Ni electrodes by very high-dose Al
+
implantation (3.1 × 10
20
cm
−3
). The dependence of the experimental
ρ
c
on net acceptor density (
N
A
) can be described by a change in the contribution of direct tunneling and trap-assisted tunneling. |
| doi_str_mv | 10.35848/1347-4065/ad43cf |
| format | article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_3059926971</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3059926971</sourcerecordid><originalsourceid>FETCH-LOGICAL-c226t-22e94594b3a31046ec95eb9ad116eefc45991de8165ce7b27d6bd388572f7733</originalsourceid><addsrcrecordid>eNp9kE1LwzAYx4MoOKcfwFvAiyB1eW9zHMOpMPDgbh5CmqYupW1qkyn99nZW9CKeHp7n-b_AD4BLjG4pz1i2wJSlCUOCL3TBqCmPwOzndAxmCBGcMEnIKTgLoRpXwRmegZe17xsdnW-hL6HfNc5A49uoTQxwPO6sfnf1AJf1TeKartZttAXskjh0Fj67Ffxwcef3EeoW6rr2g2tfYdd7Y0M4ByelroO9-J5zsF3fbVcPyebp_nG13CSGEBETQqxkXLKcaooRE9ZIbnOpC4yFtaUZfxIXNsOCG5vmJC1EXtAs4ykp05TSObiaYsfat70NUVV-37djo6Jo9BIhUzyq8KQyvQ-ht6XqetfoflAYqS-E6sBLHXipCeHoSSaP891v6H_66z_0VaU7JajiCnEkEVVdUdJPryqAag</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3059926971</pqid></control><display><type>article</type><title>Formation of ohmic contacts on heavily Al+-implanted p-type SiC without an alloying process</title><source>IOPscience journals</source><source>Institute of Physics</source><creator>Kuwahara, Kotaro ; Kitawaki, Takeaki ; Hara, Masahiro ; Kaneko, Mitsuaki ; Kimoto, Tsunenobu</creator><creatorcontrib>Kuwahara, Kotaro ; Kitawaki, Takeaki ; Hara, Masahiro ; Kaneko, Mitsuaki ; Kimoto, Tsunenobu</creatorcontrib><description>The current–voltage (
I
–
V
) characteristics and contact resistivity (
ρ
c
) of Ni electrodes formed on heavily Al
+
-implanted p-type SiC without an alloying process were investigated. A nearly ohmic
I
–
V
curve with a
ρ
c
of 9.3 × 10
−2
Ωcm
2
was demonstrated for non-alloyed Ni electrodes by very high-dose Al
+
implantation (3.1 × 10
20
cm
−3
). The dependence of the experimental
ρ
c
on net acceptor density (
N
A
) can be described by a change in the contribution of direct tunneling and trap-assisted tunneling.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/ad43cf</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>activation ratio ; Al implantation ; Alloying ; Aluminum ; Contact resistance ; Current voltage characteristics ; Electrodes ; Nickel ; ohmic contacts ; p-type SiC ; schottky barrier diodes ; SiC ; tunneling current</subject><ispartof>Japanese Journal of Applied Physics, 2024-05, Vol.63 (5), p.50903</ispartof><rights>2024 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c226t-22e94594b3a31046ec95eb9ad116eefc45991de8165ce7b27d6bd388572f7733</cites><orcidid>0000-0001-9748-8011 ; 0000-0001-5629-0105 ; 0000-0002-6649-2090</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/ad43cf/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27915,27916,38859,53831</link.rule.ids></links><search><creatorcontrib>Kuwahara, Kotaro</creatorcontrib><creatorcontrib>Kitawaki, Takeaki</creatorcontrib><creatorcontrib>Hara, Masahiro</creatorcontrib><creatorcontrib>Kaneko, Mitsuaki</creatorcontrib><creatorcontrib>Kimoto, Tsunenobu</creatorcontrib><title>Formation of ohmic contacts on heavily Al+-implanted p-type SiC without an alloying process</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>The current–voltage (
I
–
V
) characteristics and contact resistivity (
ρ
c
) of Ni electrodes formed on heavily Al
+
-implanted p-type SiC without an alloying process were investigated. A nearly ohmic
I
–
V
curve with a
ρ
c
of 9.3 × 10
−2
Ωcm
2
was demonstrated for non-alloyed Ni electrodes by very high-dose Al
+
implantation (3.1 × 10
20
cm
−3
). The dependence of the experimental
ρ
c
on net acceptor density (
N
A
) can be described by a change in the contribution of direct tunneling and trap-assisted tunneling.</description><subject>activation ratio</subject><subject>Al implantation</subject><subject>Alloying</subject><subject>Aluminum</subject><subject>Contact resistance</subject><subject>Current voltage characteristics</subject><subject>Electrodes</subject><subject>Nickel</subject><subject>ohmic contacts</subject><subject>p-type SiC</subject><subject>schottky barrier diodes</subject><subject>SiC</subject><subject>tunneling current</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LwzAYx4MoOKcfwFvAiyB1eW9zHMOpMPDgbh5CmqYupW1qkyn99nZW9CKeHp7n-b_AD4BLjG4pz1i2wJSlCUOCL3TBqCmPwOzndAxmCBGcMEnIKTgLoRpXwRmegZe17xsdnW-hL6HfNc5A49uoTQxwPO6sfnf1AJf1TeKartZttAXskjh0Fj67Ffxwcef3EeoW6rr2g2tfYdd7Y0M4ByelroO9-J5zsF3fbVcPyebp_nG13CSGEBETQqxkXLKcaooRE9ZIbnOpC4yFtaUZfxIXNsOCG5vmJC1EXtAs4ykp05TSObiaYsfat70NUVV-37djo6Jo9BIhUzyq8KQyvQ-ht6XqetfoflAYqS-E6sBLHXipCeHoSSaP891v6H_66z_0VaU7JajiCnEkEVVdUdJPryqAag</recordid><startdate>20240501</startdate><enddate>20240501</enddate><creator>Kuwahara, Kotaro</creator><creator>Kitawaki, Takeaki</creator><creator>Hara, Masahiro</creator><creator>Kaneko, Mitsuaki</creator><creator>Kimoto, Tsunenobu</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-9748-8011</orcidid><orcidid>https://orcid.org/0000-0001-5629-0105</orcidid><orcidid>https://orcid.org/0000-0002-6649-2090</orcidid></search><sort><creationdate>20240501</creationdate><title>Formation of ohmic contacts on heavily Al+-implanted p-type SiC without an alloying process</title><author>Kuwahara, Kotaro ; Kitawaki, Takeaki ; Hara, Masahiro ; Kaneko, Mitsuaki ; Kimoto, Tsunenobu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c226t-22e94594b3a31046ec95eb9ad116eefc45991de8165ce7b27d6bd388572f7733</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>activation ratio</topic><topic>Al implantation</topic><topic>Alloying</topic><topic>Aluminum</topic><topic>Contact resistance</topic><topic>Current voltage characteristics</topic><topic>Electrodes</topic><topic>Nickel</topic><topic>ohmic contacts</topic><topic>p-type SiC</topic><topic>schottky barrier diodes</topic><topic>SiC</topic><topic>tunneling current</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kuwahara, Kotaro</creatorcontrib><creatorcontrib>Kitawaki, Takeaki</creatorcontrib><creatorcontrib>Hara, Masahiro</creatorcontrib><creatorcontrib>Kaneko, Mitsuaki</creatorcontrib><creatorcontrib>Kimoto, Tsunenobu</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kuwahara, Kotaro</au><au>Kitawaki, Takeaki</au><au>Hara, Masahiro</au><au>Kaneko, Mitsuaki</au><au>Kimoto, Tsunenobu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Formation of ohmic contacts on heavily Al+-implanted p-type SiC without an alloying process</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2024-05-01</date><risdate>2024</risdate><volume>63</volume><issue>5</issue><spage>50903</spage><pages>50903-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>The current–voltage (
I
–
V
) characteristics and contact resistivity (
ρ
c
) of Ni electrodes formed on heavily Al
+
-implanted p-type SiC without an alloying process were investigated. A nearly ohmic
I
–
V
curve with a
ρ
c
of 9.3 × 10
−2
Ωcm
2
was demonstrated for non-alloyed Ni electrodes by very high-dose Al
+
implantation (3.1 × 10
20
cm
−3
). The dependence of the experimental
ρ
c
on net acceptor density (
N
A
) can be described by a change in the contribution of direct tunneling and trap-assisted tunneling.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/ad43cf</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-9748-8011</orcidid><orcidid>https://orcid.org/0000-0001-5629-0105</orcidid><orcidid>https://orcid.org/0000-0002-6649-2090</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2024-05, Vol.63 (5), p.50903 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_proquest_journals_3059926971 |
| source | IOPscience journals; Institute of Physics |
| subjects | activation ratio Al implantation Alloying Aluminum Contact resistance Current voltage characteristics Electrodes Nickel ohmic contacts p-type SiC schottky barrier diodes SiC tunneling current |
| title | Formation of ohmic contacts on heavily Al+-implanted p-type SiC without an alloying process |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T22%3A38%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Formation%20of%20ohmic%20contacts%20on%20heavily%20Al+-implanted%20p-type%20SiC%20without%20an%20alloying%20process&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Kuwahara,%20Kotaro&rft.date=2024-05-01&rft.volume=63&rft.issue=5&rft.spage=50903&rft.pages=50903-&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPB6&rft_id=info:doi/10.35848/1347-4065/ad43cf&rft_dat=%3Cproquest_cross%3E3059926971%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c226t-22e94594b3a31046ec95eb9ad116eefc45991de8165ce7b27d6bd388572f7733%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=3059926971&rft_id=info:pmid/&rfr_iscdi=true |