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The effect of sputtering parameters and doping on the properties of CrN‐based coatings—A critical review

Chromium‐based coatings have been of interest to researchers for the last two decades because of their extraordinary properties like high hardness, high wear, and corrosion resistance properties. However, it is in practice and research to increase the properties of Cr‐based coatings for high‐tempera...

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Bibliographic Details
Published in:Surface and interface analysis 2024-07, Vol.56 (7), p.479-497
Main Authors: Tiwari, Sunil Kumar, Rao, Akula Umamaheswara, Kharb, Archana Singh, Avasthi, Devesh Kumar, Verma, Piyush Chandra, Chawla, Amit Kumar
Format: Article
Language:English
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Summary:Chromium‐based coatings have been of interest to researchers for the last two decades because of their extraordinary properties like high hardness, high wear, and corrosion resistance properties. However, it is in practice and research to increase the properties of Cr‐based coatings for high‐temperature applications. Numerous dopants like silicon (Si), titanium (Ti), vanadium (V), aluminum (Al), and zirconium (Zr) have been used together with Cr to achieve enhanced properties. The plasma‐based sputtering process is one of the popular and reliable techniques to deposit thin film coatings. The substrate material, processed gas and pressure, substrate temperature, film thickness, and so on also play a significant role in varying the properties and microstructure of the deposited film. Several researchers have deposited Cr/CrN‐based thin films via the chemical vapor deposition technique (CVD) and physical vapor deposition technique (PVD) to study their properties and behavior at room temperature as well as for high‐temperature applications. This work reflects the review of work done to deposit Cr/CrN‐based coatings deposited via PVD: more specifically sputtering technique. The effect of doping in the CrN matrix and variation in sputtering parameters on the properties of CrN‐based coatings have also been studied.
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.7306