Investigation into the impact of bulk defects in the drift layer on the electrical properties of GaN-based trench Schottky barrier diodes

Using numerical simulation tools, this work systematically investigates the impact of bulk defects in the drift layer on GaN-based trench metal–insulator–semiconductor barrier-controlled Schottky rectifiers. Investigations show that in forward conduction, the acceptor-type defects significantly incr...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2024-05, Vol.63 (5), p.54003
Main Authors: Gao, Xuchen, He, Feng, Huang, Fuping, Wang, Zhizhong, Chu, Chunshuang, Tian, Kangkai, Zhang, Yonghui, Zhang, Zi-Hui
Format: Article
Language:English
Subjects:
breakdown voltage
defect
Defects
Drift
Electric fields
Electrical properties
Gallium nitrides
GaN-based trench MIS barrier-controlled Schottky (TMBS)
MIS (semiconductors)
on-resistance (Ron.sp)
Schottky diodes
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Summary:Using numerical simulation tools, this work systematically investigates the impact of bulk defects in the drift layer on GaN-based trench metal–insulator–semiconductor barrier-controlled Schottky rectifiers. Investigations show that in forward conduction, the acceptor-type defects significantly increase the on-resistance ( R on.sp ). When the device is in reverse blocking mode, donor-type defects tend to weaken the charge-coupling effect, leading to early breakdown of the device, while acceptor-type defects show the opposite feature. In addition, our report identifies that the reverse blocking effect is significantly impacted when the defects are located in the region with maximum electric field magnitude. We also find that the acceptor-type traps generate a remarkable charging/discharging effect, which will destabilize the dynamic forward conduction process. Hence, we numerically prove that bulk defects should be avoided in actual power diodes.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ad40eb