Enhancement of electro-optical properties of aluminum magnesium oxide thin films through controlled graphene oxide doping

In this study, a hybrid thin film was manufactured by doping graphene oxide (GO) into a sol–gel solution of aluminum magnesium oxide (AlMgO) using a brush process. The graphene oxide doping ratios used were 0, 5, and 15 wt%. In the process of manufacturing a thin film, the produced sol–gel solution...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2024-06, Vol.35 (16), p.1096
Main Authors: Oh, Jin Young, Choi, Bo-Kyeong, Liu, Yang, Seo, Dae-Shik
Format: Article
Language:English
Subjects:
Aluminum
Characterization and Evaluation of Materials
Chemical composition
Chemistry and Materials Science
Doping
Electrical properties
Graphene
Magnesium oxide
Materials Science
Microscopy
Optical and Electronic Materials
Optical properties
Oxidation
Shear stress
Sol-gel processes
Superconductors (materials)
Thin films
X ray photoelectron spectroscopy
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Summary:In this study, a hybrid thin film was manufactured by doping graphene oxide (GO) into a sol–gel solution of aluminum magnesium oxide (AlMgO) using a brush process. The graphene oxide doping ratios used were 0, 5, and 15 wt%. In the process of manufacturing a thin film, the produced sol–gel solution generates a contractile force due to the shear stress of the brush bristles, forming a microgroove structure. This structure was analyzed through atomic force microscopy and transmission electron microscopy, and large particles were generated on the AlMgO-GO surface and roughness increased due to the shrinkage force of the solution. In addition, we investigated changes in the chemical composition of the surface due to the formation of a hybrid thin film through XPS analysis and found that thermal oxidation becomes more active as the oxygen deficiency layer decreases. Lastly, by comparing the change in electro-optical properties of the thin film due to the physical and chemical changes in the surface due to GO doping, it was demonstrated that GO doping greatly improved the electrical properties. Based on these observations, AlMgO-GO thin films can be considered promising candidates for next-generation displays and applications in semiconductors and solar and battery thin films.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-024-12871-3