Superconductor bistable vortex memory for data storage and in-memory computing

• Published in: arXiv.org 2024-06
• Main Authors: Mustafa Altay Karamuftuoglu, Ucpinar, Beyza Zeynep, Razmkhah, Sasan, Massoud Pedram
• Format: Article
• Language: English
• Subjects: Arrays; Data storage; Memory tasks; Power consumption; Random access memory
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.2406.08871

Superconductor electronics (SCE) is a promising complementary and beyond CMOS technology. However, despite its practical benefits, the realization of SCE logic faces a significant challenge due to the absence of dense and scalable nonvolatile memory designs. While various nonvolatile memory technologies, including Non-destructive readout, vortex transitional memory (VTM), and magnetic memory, have been explored, achieving a superconductor random-access memory (RAM) crossbar array remains challenging. This paper introduces a novel, nonvolatile, high-density, and scalable VTM cell design for SCE applications. Our proposed design addresses scaling issues while boasting zero static power consumption characteristics. Our design leverages current summation, enabling analog multiply-accumulate operations -an essential feature for many in-memory computational tasks. We demonstrate the efficacy of our approach with a 32 x 32 superconductor memory array operating at 20 GHz. This design effectively addresses scaling issues and utilizes current summation that can be used for analog multiply-accumulate operations. Additionally, we showcase the accumulation property of the memory through analog simulations conducted on an 8 x 8 superconductor crossbar array.