Interplay between topology and correlations in the second moiré band of twisted bilayer MoTe2

Topological flat bands formed in two-dimensional lattice systems offer unique opportunity to study the fractional phases of matter in the absence of an external magnetic field. Celebrated examples include fractional quantum anomalous Hall (FQAH) effects and fractional topological insulators. Recentl...

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Published in:arXiv.org 2024-12
Main Authors: Xu, Fan, Chang, Xumin, Xiao, Jiayong, Zhang, Yixin, Liu, Feng, Sun, Zheng, Mao, Ning, Peshcherenko, Nikolai, Li, Jiayi, Watanabe, Kenji, Taniguchi, Takashi, Tong, Bingbing, Lu, Li, Jia, Jinfeng, Qian, Dong, Shi, Zhiwen, Zhang, Yang, Liu, Xiaoxue, Jiang, Shengwei, Li, Tingxin
Format: Article
Language:English
Subjects:
Bilayers
Electric fields
Ferromagnetism
Graphene
Integers
Magnetic fields
Magnetoresistance
Magnetoresistivity
Molybdenum compounds
Multilayers
Phase transitions
Tellurides
Temperature dependence
Topological insulators
Topology
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Summary:Topological flat bands formed in two-dimensional lattice systems offer unique opportunity to study the fractional phases of matter in the absence of an external magnetic field. Celebrated examples include fractional quantum anomalous Hall (FQAH) effects and fractional topological insulators. Recently, FQAH effects have been experimentally realized in both the twisted bilayer MoTe2 (tMoTe2) system and the rhombohedral stacked multilayer graphene/hBN moiré systems. To date, experimental studies mainly focus on the first moiré flat band, except a very recent work that studied novel transport properties in higher moiré bands of a 2.1{\deg} tMoTe2 device. Here, we present the systematical transport study of approximately 3{\deg} tMoTe2 devices, especially for the second moiré band. At {\nu} = -2 and -4, time-reversal-symmetric single and double quantum spin Hall states formed, consistent with the previous observation in 2.1{\deg} tMoTe2 device. On the other hand, we observed ferromagnetism in the second moiré band, and a Chern insulator state driven by out-of-plane magnetic fields at {\nu} = -3. At {\nu} = -2.2 to -2.7, finite temperature resistivity minimum with 1/T scaling at low temperatures, and large out-of-plane negative magnetoresistance have been observed. Applying out-of-plane electric field can induce quantum phase transitions at both integer and fractional filling factors. Our studies pave the way for realizing tunable topological states and other unexpected magnetic phases beyond the first moiré flat band based on twisted MoTe2 platform.
ISSN:2331-8422