Diverse Responses in Lattice Thermal Conductivity of \(n\)-type/\(p\)-type Semiconductors Driven by Asymmetric Electron-Phonon Interactions

Accurately assessing the impact of electron-phonon interaction (EPI) on the lattice thermal conductivity of semiconductors is crucial for the thermal management of electronic devices and a unified physical understanding of this issue is highly desired. In this work, we predict the lattice thermal co...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2024-06
Main Authors: Sun, Jianshi, Li, Shouhang, Tong, Zhen, Shao, Cheng, Xie, Han, Meng, An, Zhang, Chuang, Zhu, Xiongfei, Huang, Chen, Xiong, Yucheng, Liu, Xiangjun
Format: Article
Language:English
Subjects:
Asymmetry
Carrier density
Conductivity
Current carriers
Density of states
Doping
Electron density
Electron phonon interactions
Energy gap
First principles
Heat conductivity
Heat transfer
P-type semiconductors
Phonons
Semiconductors
Thermal conductivity
Thermal management
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Accurately assessing the impact of electron-phonon interaction (EPI) on the lattice thermal conductivity of semiconductors is crucial for the thermal management of electronic devices and a unified physical understanding of this issue is highly desired. In this work, we predict the lattice thermal conductivities of typical direct and indirect bandgap semiconductors accounting for EPI based on mode-level first-principles calculations. It is found that EPI has a larger effect on the lattice thermal conductivity of \(p\)-type doping compared to \(n\)-type doping in the same semiconductor at high charge carrier concentrations. The stronger EPI in \(p\)-type doping is attributed to the relatively higher electron density of states caused by the relatively larger \(p\)-orbital component. Furthermore, EPI has a stronger influence on the lattice thermal conductivity of \(n\)-type indirect bandgap semiconductors than \(n\)-type direct bandgap semiconductors. This is attributed to the relatively lower electron density of states in direct bandgap semiconductors stemming from the \(s\)-orbital component. This work reveals that there exist diverse responses in lattice thermal conductivity of \(n\)-type/\(p\)-type semiconductors, which can be attributed to asymmetric EPIs.
ISSN:2331-8422