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Investigation on growth, Hirshfeld surface, optical, thermal and topological properties of nonlinear optical p-nitrophenol single crystal
The organic p-nitrophenol (4NP) bulk crystal was harvested through the slow evaporation solution growth method. The ingot underwent various characterizations to assess its suitability for device fabrication. The structural parameters of the ingot mentioned above were assessed by powder X-ray diffrac...
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Published in: | Journal of materials science. Materials in electronics 2024-06, Vol.35 (18), p.1231, Article 1231 |
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description | The organic p-nitrophenol (4NP) bulk crystal was harvested through the slow evaporation solution growth method. The ingot underwent various characterizations to assess its suitability for device fabrication. The structural parameters of the ingot mentioned above were assessed by powder X-ray diffraction (PXRD) using Rietveld refinement. The optical characteristics of the 4NP crystal were investigated using UV–Vis spectroscopy, photoluminescence (PL) and time-resolved photoluminescence (TRPL) techniques. The UV–Vis spectrum analysis of the 4NP crystal reveals a lower cutoff wavelength of 451 nm with a band gap of 3.148 eV. From the transmittance data, various optical constants were computed. The optical conductivity (
σ
) of the 4NP crystal at a wavelength of 568 nm was found to be 1.950 × 10
10
s
−1
. The photoluminescence (PL) analysis indicated a significant emission peak at 390 nm which is associated with the violet region of the electromagnetic spectrum, while the average lifetime was determined using time-resolved photoluminescence (TRPL). The thermal stability of the compound was studied by thermogravimetric analysis and examination of differential thermal curves. The TG/DTA analysis shows that the titled material is stable up to 132 °C. The chemical structure of 4NP crystal was optimized and wavefunction analysis was performed using Gaussian09W. The software programs Multiwfn and VMD 9.1 are utilized to visualize “LOL, RDG, ELF and Inter and Intramolecular relationship”. The Hirshfeld analysis was carried out through Crystalexplorer. |
doi_str_mv | 10.1007/s10854-024-12938-1 |
format | article |
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σ
) of the 4NP crystal at a wavelength of 568 nm was found to be 1.950 × 10
10
s
−1
. The photoluminescence (PL) analysis indicated a significant emission peak at 390 nm which is associated with the violet region of the electromagnetic spectrum, while the average lifetime was determined using time-resolved photoluminescence (TRPL). The thermal stability of the compound was studied by thermogravimetric analysis and examination of differential thermal curves. The TG/DTA analysis shows that the titled material is stable up to 132 °C. The chemical structure of 4NP crystal was optimized and wavefunction analysis was performed using Gaussian09W. The software programs Multiwfn and VMD 9.1 are utilized to visualize “LOL, RDG, ELF and Inter and Intramolecular relationship”. The Hirshfeld analysis was carried out through Crystalexplorer.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-024-12938-1</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Cut off wavelength ; Differential thermal analysis ; Ingots ; Materials Science ; Nitrophenol ; Nonlinear optics ; Optical and Electronic Materials ; Optical properties ; Photoluminescence ; Single crystals ; Software ; Spectrum analysis ; Thermal stability ; Wave functions ; X ray powder diffraction</subject><ispartof>Journal of materials science. Materials in electronics, 2024-06, Vol.35 (18), p.1231, Article 1231</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c200t-f4b0af7009b0b273f255d86c731869e35921776e302f08c8562cfd34fbb7900c3</cites><orcidid>0000-0002-8242-0097</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Jyoti</creatorcontrib><creatorcontrib>Vijayan, N.</creatorcontrib><creatorcontrib>Kiran</creatorcontrib><creatorcontrib>Joshi, Divyansh</creatorcontrib><creatorcontrib>Goswami, Preeti</creatorcontrib><creatorcontrib>Kavimani, M.</creatorcontrib><creatorcontrib>Balachandran, V.</creatorcontrib><creatorcontrib>Gupta, Govind</creatorcontrib><title>Investigation on growth, Hirshfeld surface, optical, thermal and topological properties of nonlinear optical p-nitrophenol single crystal</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>The organic p-nitrophenol (4NP) bulk crystal was harvested through the slow evaporation solution growth method. The ingot underwent various characterizations to assess its suitability for device fabrication. The structural parameters of the ingot mentioned above were assessed by powder X-ray diffraction (PXRD) using Rietveld refinement. The optical characteristics of the 4NP crystal were investigated using UV–Vis spectroscopy, photoluminescence (PL) and time-resolved photoluminescence (TRPL) techniques. The UV–Vis spectrum analysis of the 4NP crystal reveals a lower cutoff wavelength of 451 nm with a band gap of 3.148 eV. From the transmittance data, various optical constants were computed. The optical conductivity (
σ
) of the 4NP crystal at a wavelength of 568 nm was found to be 1.950 × 10
10
s
−1
. The photoluminescence (PL) analysis indicated a significant emission peak at 390 nm which is associated with the violet region of the electromagnetic spectrum, while the average lifetime was determined using time-resolved photoluminescence (TRPL). The thermal stability of the compound was studied by thermogravimetric analysis and examination of differential thermal curves. The TG/DTA analysis shows that the titled material is stable up to 132 °C. The chemical structure of 4NP crystal was optimized and wavefunction analysis was performed using Gaussian09W. The software programs Multiwfn and VMD 9.1 are utilized to visualize “LOL, RDG, ELF and Inter and Intramolecular relationship”. The Hirshfeld analysis was carried out through Crystalexplorer.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Cut off wavelength</subject><subject>Differential thermal analysis</subject><subject>Ingots</subject><subject>Materials Science</subject><subject>Nitrophenol</subject><subject>Nonlinear optics</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties</subject><subject>Photoluminescence</subject><subject>Single crystals</subject><subject>Software</subject><subject>Spectrum analysis</subject><subject>Thermal stability</subject><subject>Wave functions</subject><subject>X ray powder diffraction</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kMFKJDEQhoO44KzuC3gKeJ2slaTT6T4usquC4GUXvIV0JumJxKQ3yeziI_jWZnaUvQkFdajv_6vqR-icwlcKIC8LhUF0BFhHKBv5QOgRWlEhOekG9nCMVjAKSTrB2An6XMojAPQdH1bo5Tb-saX6WVefIm415_S3btf4xueydTZscNllp41d47RUb3RY47q1-UkHrOMG17SkkOb9AC85LTZXbwtODscUg49W53chXkj0tTFbG1PAxcc5WGzyc6k6nKFPTodiv7z1U_Trx_efVzfk7v769urbHTEMoBLXTaCdBBgnmJjkjgmxGXojOR360XIxMiplbzkwB4MZRM-M2_DOTZMcAQw_RRcH33bs7137XT2mXY5tpeIgaS9os2oUO1Amp1KydWrJ_knnZ0VB7SNXh8hVi1z9i1ztRfwgKg2Os83_rT9QvQKF1Iag</recordid><startdate>20240601</startdate><enddate>20240601</enddate><creator>Jyoti</creator><creator>Vijayan, N.</creator><creator>Kiran</creator><creator>Joshi, Divyansh</creator><creator>Goswami, Preeti</creator><creator>Kavimani, M.</creator><creator>Balachandran, V.</creator><creator>Gupta, Govind</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-8242-0097</orcidid></search><sort><creationdate>20240601</creationdate><title>Investigation on growth, Hirshfeld surface, optical, thermal and topological properties of nonlinear optical p-nitrophenol single crystal</title><author>Jyoti ; Vijayan, N. ; Kiran ; Joshi, Divyansh ; Goswami, Preeti ; Kavimani, M. ; Balachandran, V. ; Gupta, Govind</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c200t-f4b0af7009b0b273f255d86c731869e35921776e302f08c8562cfd34fbb7900c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Cut off wavelength</topic><topic>Differential thermal analysis</topic><topic>Ingots</topic><topic>Materials Science</topic><topic>Nitrophenol</topic><topic>Nonlinear optics</topic><topic>Optical and Electronic Materials</topic><topic>Optical properties</topic><topic>Photoluminescence</topic><topic>Single crystals</topic><topic>Software</topic><topic>Spectrum analysis</topic><topic>Thermal stability</topic><topic>Wave functions</topic><topic>X ray powder diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jyoti</creatorcontrib><creatorcontrib>Vijayan, N.</creatorcontrib><creatorcontrib>Kiran</creatorcontrib><creatorcontrib>Joshi, Divyansh</creatorcontrib><creatorcontrib>Goswami, Preeti</creatorcontrib><creatorcontrib>Kavimani, M.</creatorcontrib><creatorcontrib>Balachandran, V.</creatorcontrib><creatorcontrib>Gupta, Govind</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jyoti</au><au>Vijayan, N.</au><au>Kiran</au><au>Joshi, Divyansh</au><au>Goswami, Preeti</au><au>Kavimani, M.</au><au>Balachandran, V.</au><au>Gupta, Govind</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation on growth, Hirshfeld surface, optical, thermal and topological properties of nonlinear optical p-nitrophenol single crystal</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2024-06-01</date><risdate>2024</risdate><volume>35</volume><issue>18</issue><spage>1231</spage><pages>1231-</pages><artnum>1231</artnum><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>The organic p-nitrophenol (4NP) bulk crystal was harvested through the slow evaporation solution growth method. The ingot underwent various characterizations to assess its suitability for device fabrication. The structural parameters of the ingot mentioned above were assessed by powder X-ray diffraction (PXRD) using Rietveld refinement. The optical characteristics of the 4NP crystal were investigated using UV–Vis spectroscopy, photoluminescence (PL) and time-resolved photoluminescence (TRPL) techniques. The UV–Vis spectrum analysis of the 4NP crystal reveals a lower cutoff wavelength of 451 nm with a band gap of 3.148 eV. From the transmittance data, various optical constants were computed. The optical conductivity (
σ
) of the 4NP crystal at a wavelength of 568 nm was found to be 1.950 × 10
10
s
−1
. The photoluminescence (PL) analysis indicated a significant emission peak at 390 nm which is associated with the violet region of the electromagnetic spectrum, while the average lifetime was determined using time-resolved photoluminescence (TRPL). The thermal stability of the compound was studied by thermogravimetric analysis and examination of differential thermal curves. The TG/DTA analysis shows that the titled material is stable up to 132 °C. The chemical structure of 4NP crystal was optimized and wavefunction analysis was performed using Gaussian09W. The software programs Multiwfn and VMD 9.1 are utilized to visualize “LOL, RDG, ELF and Inter and Intramolecular relationship”. The Hirshfeld analysis was carried out through Crystalexplorer.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-024-12938-1</doi><orcidid>https://orcid.org/0000-0002-8242-0097</orcidid></addata></record> |
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subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Cut off wavelength Differential thermal analysis Ingots Materials Science Nitrophenol Nonlinear optics Optical and Electronic Materials Optical properties Photoluminescence Single crystals Software Spectrum analysis Thermal stability Wave functions X ray powder diffraction |
title | Investigation on growth, Hirshfeld surface, optical, thermal and topological properties of nonlinear optical p-nitrophenol single crystal |
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