Growth of Silicene by Molecular Beam Epitaxy on CaF2/Si(111) Substrates Modified by Electron Irradiation

For the first time, the possibility of producing silicene on CaF 2 /Si(111) substrates modified by electron irradiation is experimentally demonstrated. It is shown that areas of the planar surface of CaSi 2 with hexagonal packing formed under an electron beam can be used as a natural template for th...

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Bibliographic Details
Published in:JETP letters 2024-05, Vol.119 (9), p.703-707
Main Authors: Zinovieva, A. F., Zinovyev, V. A., Katsyuba, A. V., Volodin, V. A., Muratov, V. I., Dvurechenskii, A. V.
Format: Article
Language:English
Subjects:
Atomic
Biological and Medical Physics
Biophysics
Calcium fluoride
Condensed Matter
Electron beams
Electron irradiation
Epitaxial growth
Molecular
Molecular beam epitaxy
Optical and Plasma Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Quantum Information Technology
Raman spectroscopy
Silicene
Silicon substrates
Solid State Physics
Spintronics
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Summary:For the first time, the possibility of producing silicene on CaF 2 /Si(111) substrates modified by electron irradiation is experimentally demonstrated. It is shown that areas of the planar surface of CaSi 2 with hexagonal packing formed under an electron beam can be used as a natural template for the subsequent growth of silicene. Silicon is deposited on such surfaces and the formation of silicene islands is confirmed by atomic force microscopy and Raman spectroscopy.
ISSN:0021-3640
1090-6487
DOI:10.1134/S0021364024600599