31‐3: Enhancing Micro‐LED Pixel Circuit Performance through Threshold Voltage Compensation Utilizing LTPO Technology

In this paper, we proposed a new low‐temperate polycrystalline silicon and oxide (LTPO) thin film transistor (TFT) pixel circuit for micro light‐emitting diode (µLED) displays. This design considers the current‐sensitive attributes of µLEDs and employs a hybrid driving approach involving Pulse Width...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2024-04, Vol.55 (S1), p.267-268
Main Authors: Li, Yan, Im, Hwarim, Moon, Kook Chol, Kim, Yong-Sang
Format: Article
Language:English
Subjects:
Backplanes
Compensation
IR drop
Light emitting diodes
LTPO
Micro light‐emitting diode
pixel circuit
Pixels
Polysilicon
Pulse amplitude modulation
Pulse duration modulation
Semiconductor devices
Thin film transistors
Threshold voltage
Voltage drop
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Summary:In this paper, we proposed a new low‐temperate polycrystalline silicon and oxide (LTPO) thin film transistor (TFT) pixel circuit for micro light‐emitting diode (µLED) displays. This design considers the current‐sensitive attributes of µLEDs and employs a hybrid driving approach involving Pulse Width Modulation (PWM) and Pulse Amplitude Modulation (PAM). The proposed pixel circuit can not only compensate the threshold voltages of the two driving TFTs, but also reduce the voltage drop by current (IR drop) of the entire backplane through compensation and offset.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.17053