17‐2: Characterization of A‐In‐Ga‐Zn‐O Field Effect Transistors with ALD‐Grown IGZO Channel Layer

The A‐In‐Ga‐Zn‐O field effect transistors are proposed, with the a‐IGZO channel layer deposited by atomic layer deposition (ALD). The characterization of the transistors are researched. The situation where different concentration of components (In:Ga:Zn) are also considered, including 1:1:1, 2:1:1 a...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2024-04, Vol.55 (S1), p.145-146
Main Authors: Gu, Chen, Zhang, Chunyu, Chen, Chuanke, Geng, Di
Format: Article
Language:English
Subjects:
ALD
Atomic layer epitaxy
a‐IGZO field effect transistor
Field effect transistors
Indium gallium zinc oxide
Semiconductor devices
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Summary:The A‐In‐Ga‐Zn‐O field effect transistors are proposed, with the a‐IGZO channel layer deposited by atomic layer deposition (ALD). The characterization of the transistors are researched. The situation where different concentration of components (In:Ga:Zn) are also considered, including 1:1:1, 2:1:1 and 3:1:1.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.17021