Indepth doping assessment of thick doped GaAs layer by scanning spreading resistance microscopy

• Published in: Journal of applied physics 2024-07, Vol.136 (3)
• Main Authors: Qiang, Lanpeng, Chereau, Emmanuel, Regreny, Philippe, Avit, Geoffrey, Trassoudaine, Agnès, Gil, Evelyne, André, Yamina, Bluet, Jean-Marie, Albertini, David, Brémond, Georges
• Format: Article
• Language: English
• Subjects: Calibration; Carrier density; Doping; Engineering Sciences; Epitaxial growth; Gallium arsenide; Microscopy; Molecular beam epitaxy; Molecular structure; Multilayers; Physics; Secondary ion mass spectrometry; Technology assessment; Thick films; Vapor phase epitaxy; Vapor phases; Vapor resistance
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/5.0215140

Scanning spreading resistance microscopy (SSRM) measurements were performed on GaAs thick films grown by hydride vapor phase epitaxy technology under different growth conditions to evaluate their carrier concentrations. For this purpose, a calibration curve was established based on a multilayer staircase structure grown by molecular beam epitaxy. The dopant calibration range measured by secondary ion mass spectrometry is from 5 × 1016  to 1019 cm−3. An abnormal phenomenon in the calibration process was explained by taking into account the parasitic parallel resistance of the calibration samples. Finally, the calibration curve was used to quantitatively analyze the carriers inside the Zn doping p-type GaAs film from 4 × 1016 to 1018 cm−3 range. We demonstrate here the applicability of SSRM to the in-depth analysis of thick epilayers, providing new inputs for the control of thick film technologies.