Effect of Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

Using the methods of secondary ion mass spectrometry, elastic peak electron spectroscopy, and Auger electron spectroscopy, the elemental and chemical composition of the surface and concentration profiles of the distribution of atoms over the depth of silicon implanted with ions with energy E 0 = 1 k...

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Bibliographic Details
Published in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2024, Vol.18 (3), p.598-601
Main Authors: Allayarova, G. Kh, Umirzakov, B. E., Tashatov, A. K.
Format: Article
Language:English
Subjects:
Atomic properties
Chemical composition
Chemistry and Materials Science
Composition effects
Electron spectroscopy
Energy distribution
Ion implantation
Materials Science
Secondary ion mass spectrometry
Silicon dioxide
Surfaces and Interfaces
Thin Films
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Summary:Using the methods of secondary ion mass spectrometry, elastic peak electron spectroscopy, and Auger electron spectroscopy, the elemental and chemical composition of the surface and concentration profiles of the distribution of atoms over the depth of silicon implanted with ions with energy E 0 = 1 keV at a dose of D = 6 × 10 16 cm –2 were studied. It was found that oxides and suboxides of Si (SiO 2 , Si 2 O, and SiO 0.5 ) were formed in the ion-doped layer, which also contained unbound O and Si atoms. Post-implantation annealing at 850–900 K led to the formation of a stoichiometric SiO 2 layer ~25–30 Å thick.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451024700162