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Enhancing electrical properties through in-situ controlled nanocrystallization of V2O5–TeO2 glass
V 2 O 5 –TeO 2 glass–ceramics (VTGC) were prepared by controlled annealing of the V 2 O 5 –TeO 2 glass (VTG), which illustrates a parent glass matrix with a single charge carrier. The annealing proceeded at six temperatures selected between the glass transition and the maximum of the first crystalli...
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| Published in: | Journal of materials science 2024-07, Vol.59 (27), p.12600-12612 |
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| Main Authors: | , , , , , , , |
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| container_end_page | 12612 |
| container_issue | 27 |
| container_start_page | 12600 |
| container_title | Journal of materials science |
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| creator | Okoczuk, Piotr Kwiatkowska, Agnieszka Murawski, Leon Pietrzak, Tomasz K. Wójcik, Natalia A. Garmroudi, Fabian Wicikowski, Leszek Kościelska, Barbara |
| description | V
2
O
5
–TeO
2
glass–ceramics (VTGC) were prepared by controlled annealing of the V
2
O
5
–TeO
2
glass (VTG), which illustrates a parent glass matrix with a single charge carrier. The annealing proceeded at six temperatures selected between the glass transition and the maximum of the first crystallization process to obtain various nanocrystallite sizes. Heat treatment caused an increase in DC conductivity by 2.5–3.5 (250–285 °C) order of magnitude. Using thermal analysis, the crystal growth process was determined to be 1D. Structural studies show that the obtained materials are partially amorphous and polycrystalline with nanometer-sized crystallites. Subtle thread-like structures were observed using conductive AFM. The activation energy of the conduction process decreased from 0.38 eV in VTG to 0.18–0.11 eV (250–285 °C) in VTGC. The radii of crystallites were calculated based on the theoretical model of electron hopping between connected semiconducting nanocrystallites and vary between 1.7 and 2.8 nm (250–285 °C). Thermoelectric studies indicate constant carrier concentration. Features characteristic of small polaron hopping-governed materials were observed. We suggest V
3
O
7
nanocrystals as conductive media in VTGC.
Graphical abstract |
| doi_str_mv | 10.1007/s10853-024-09957-y |
| format | article |
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2
O
5
–TeO
2
glass–ceramics (VTGC) were prepared by controlled annealing of the V
2
O
5
–TeO
2
glass (VTG), which illustrates a parent glass matrix with a single charge carrier. The annealing proceeded at six temperatures selected between the glass transition and the maximum of the first crystallization process to obtain various nanocrystallite sizes. Heat treatment caused an increase in DC conductivity by 2.5–3.5 (250–285 °C) order of magnitude. Using thermal analysis, the crystal growth process was determined to be 1D. Structural studies show that the obtained materials are partially amorphous and polycrystalline with nanometer-sized crystallites. Subtle thread-like structures were observed using conductive AFM. The activation energy of the conduction process decreased from 0.38 eV in VTG to 0.18–0.11 eV (250–285 °C) in VTGC. The radii of crystallites were calculated based on the theoretical model of electron hopping between connected semiconducting nanocrystallites and vary between 1.7 and 2.8 nm (250–285 °C). Thermoelectric studies indicate constant carrier concentration. Features characteristic of small polaron hopping-governed materials were observed. We suggest V
3
O
7
nanocrystals as conductive media in VTGC.
Graphical abstract</description><identifier>ISSN: 0022-2461</identifier><identifier>EISSN: 1573-4803</identifier><identifier>DOI: 10.1007/s10853-024-09957-y</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Amorphous materials ; Annealing ; Carrier density ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Classical Mechanics ; Crystal growth ; Crystallites ; Crystallization ; Crystallography and Scattering Methods ; Current carriers ; Electrical properties ; Electronic Materials ; Glass ceramics ; Glass transition temperature ; Heat treatment ; Hopping conduction ; Materials Science ; Nanocrystals ; Polymer Sciences ; Solid Mechanics ; Tellurium dioxide ; Temperature ; Thermal analysis ; Thermoelectric materials ; Vanadium pentoxide</subject><ispartof>Journal of materials science, 2024-07, Vol.59 (27), p.12600-12612</ispartof><rights>The Author(s) 2024</rights><rights>The Author(s) 2024. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c244t-38bb26bbdd30cbae8ca08fcdc74f9e06dc03f7f03d746c1792514d73eaf8b6cd3</cites><orcidid>0000-0002-3752-7266</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Okoczuk, Piotr</creatorcontrib><creatorcontrib>Kwiatkowska, Agnieszka</creatorcontrib><creatorcontrib>Murawski, Leon</creatorcontrib><creatorcontrib>Pietrzak, Tomasz K.</creatorcontrib><creatorcontrib>Wójcik, Natalia A.</creatorcontrib><creatorcontrib>Garmroudi, Fabian</creatorcontrib><creatorcontrib>Wicikowski, Leszek</creatorcontrib><creatorcontrib>Kościelska, Barbara</creatorcontrib><title>Enhancing electrical properties through in-situ controlled nanocrystallization of V2O5–TeO2 glass</title><title>Journal of materials science</title><addtitle>J Mater Sci</addtitle><description>V
2
O
5
–TeO
2
glass–ceramics (VTGC) were prepared by controlled annealing of the V
2
O
5
–TeO
2
glass (VTG), which illustrates a parent glass matrix with a single charge carrier. The annealing proceeded at six temperatures selected between the glass transition and the maximum of the first crystallization process to obtain various nanocrystallite sizes. Heat treatment caused an increase in DC conductivity by 2.5–3.5 (250–285 °C) order of magnitude. Using thermal analysis, the crystal growth process was determined to be 1D. Structural studies show that the obtained materials are partially amorphous and polycrystalline with nanometer-sized crystallites. Subtle thread-like structures were observed using conductive AFM. The activation energy of the conduction process decreased from 0.38 eV in VTG to 0.18–0.11 eV (250–285 °C) in VTGC. The radii of crystallites were calculated based on the theoretical model of electron hopping between connected semiconducting nanocrystallites and vary between 1.7 and 2.8 nm (250–285 °C). Thermoelectric studies indicate constant carrier concentration. Features characteristic of small polaron hopping-governed materials were observed. We suggest V
3
O
7
nanocrystals as conductive media in VTGC.
Graphical abstract</description><subject>Amorphous materials</subject><subject>Annealing</subject><subject>Carrier density</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Classical Mechanics</subject><subject>Crystal growth</subject><subject>Crystallites</subject><subject>Crystallization</subject><subject>Crystallography and Scattering Methods</subject><subject>Current carriers</subject><subject>Electrical properties</subject><subject>Electronic Materials</subject><subject>Glass ceramics</subject><subject>Glass transition temperature</subject><subject>Heat treatment</subject><subject>Hopping conduction</subject><subject>Materials Science</subject><subject>Nanocrystals</subject><subject>Polymer Sciences</subject><subject>Solid Mechanics</subject><subject>Tellurium dioxide</subject><subject>Temperature</subject><subject>Thermal analysis</subject><subject>Thermoelectric materials</subject><subject>Vanadium pentoxide</subject><issn>0022-2461</issn><issn>1573-4803</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kL1OwzAUhS0EEqXwAkyWmA3XP4mTEVXlR6rUpbBajuOkqYJdbHcIE-_AG_IkBILExnSX75xz9SF0SeGaAsibSKHIOAEmCJRlJslwhGY0k5yIAvgxmgEwRpjI6Sk6i3EHAJlkdIbM0m21M51rse2tSaEzusf74Pc2pM5GnLbBH9ot7hyJXTpg410Kvu9tjZ123oQhJt333ZtOnXfYN_iZrbPP94-NXTPc9jrGc3TS6D7ai987R093y83igazW94-L2xUxTIhEeFFVLK-quuZgKm0Lo6FoTG2kaEoLeW2AN7IBXkuRGypLllFRS251U1S5qfkcXU294_uvBxuT2vlDcOOk4lBQIbkUMFJsokzwMQbbqH3oXnQYFAX1LVNNMtUoU_3IVMMY4lMojrBrbfir_if1BVIie3c</recordid><startdate>20240701</startdate><enddate>20240701</enddate><creator>Okoczuk, Piotr</creator><creator>Kwiatkowska, Agnieszka</creator><creator>Murawski, Leon</creator><creator>Pietrzak, Tomasz K.</creator><creator>Wójcik, Natalia A.</creator><creator>Garmroudi, Fabian</creator><creator>Wicikowski, Leszek</creator><creator>Kościelska, Barbara</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-3752-7266</orcidid></search><sort><creationdate>20240701</creationdate><title>Enhancing electrical properties through in-situ controlled nanocrystallization of V2O5–TeO2 glass</title><author>Okoczuk, Piotr ; Kwiatkowska, Agnieszka ; Murawski, Leon ; Pietrzak, Tomasz K. ; Wójcik, Natalia A. ; Garmroudi, Fabian ; Wicikowski, Leszek ; Kościelska, Barbara</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c244t-38bb26bbdd30cbae8ca08fcdc74f9e06dc03f7f03d746c1792514d73eaf8b6cd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Amorphous materials</topic><topic>Annealing</topic><topic>Carrier density</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Classical Mechanics</topic><topic>Crystal growth</topic><topic>Crystallites</topic><topic>Crystallization</topic><topic>Crystallography and Scattering Methods</topic><topic>Current carriers</topic><topic>Electrical properties</topic><topic>Electronic Materials</topic><topic>Glass ceramics</topic><topic>Glass transition temperature</topic><topic>Heat treatment</topic><topic>Hopping conduction</topic><topic>Materials Science</topic><topic>Nanocrystals</topic><topic>Polymer Sciences</topic><topic>Solid Mechanics</topic><topic>Tellurium dioxide</topic><topic>Temperature</topic><topic>Thermal analysis</topic><topic>Thermoelectric materials</topic><topic>Vanadium pentoxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Okoczuk, Piotr</creatorcontrib><creatorcontrib>Kwiatkowska, Agnieszka</creatorcontrib><creatorcontrib>Murawski, Leon</creatorcontrib><creatorcontrib>Pietrzak, Tomasz K.</creatorcontrib><creatorcontrib>Wójcik, Natalia A.</creatorcontrib><creatorcontrib>Garmroudi, Fabian</creatorcontrib><creatorcontrib>Wicikowski, Leszek</creatorcontrib><creatorcontrib>Kościelska, Barbara</creatorcontrib><collection>SpringerOpen</collection><collection>CrossRef</collection><jtitle>Journal of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Okoczuk, Piotr</au><au>Kwiatkowska, Agnieszka</au><au>Murawski, Leon</au><au>Pietrzak, Tomasz K.</au><au>Wójcik, Natalia A.</au><au>Garmroudi, Fabian</au><au>Wicikowski, Leszek</au><au>Kościelska, Barbara</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancing electrical properties through in-situ controlled nanocrystallization of V2O5–TeO2 glass</atitle><jtitle>Journal of materials science</jtitle><stitle>J Mater Sci</stitle><date>2024-07-01</date><risdate>2024</risdate><volume>59</volume><issue>27</issue><spage>12600</spage><epage>12612</epage><pages>12600-12612</pages><issn>0022-2461</issn><eissn>1573-4803</eissn><abstract>V
2
O
5
–TeO
2
glass–ceramics (VTGC) were prepared by controlled annealing of the V
2
O
5
–TeO
2
glass (VTG), which illustrates a parent glass matrix with a single charge carrier. The annealing proceeded at six temperatures selected between the glass transition and the maximum of the first crystallization process to obtain various nanocrystallite sizes. Heat treatment caused an increase in DC conductivity by 2.5–3.5 (250–285 °C) order of magnitude. Using thermal analysis, the crystal growth process was determined to be 1D. Structural studies show that the obtained materials are partially amorphous and polycrystalline with nanometer-sized crystallites. Subtle thread-like structures were observed using conductive AFM. The activation energy of the conduction process decreased from 0.38 eV in VTG to 0.18–0.11 eV (250–285 °C) in VTGC. The radii of crystallites were calculated based on the theoretical model of electron hopping between connected semiconducting nanocrystallites and vary between 1.7 and 2.8 nm (250–285 °C). Thermoelectric studies indicate constant carrier concentration. Features characteristic of small polaron hopping-governed materials were observed. We suggest V
3
O
7
nanocrystals as conductive media in VTGC.
Graphical abstract</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10853-024-09957-y</doi><tpages>13</tpages><orcidid>https://orcid.org/0000-0002-3752-7266</orcidid><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of materials science, 2024-07, Vol.59 (27), p.12600-12612 |
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| source | Springer Nature |
| subjects | Amorphous materials Annealing Carrier density Characterization and Evaluation of Materials Chemistry and Materials Science Classical Mechanics Crystal growth Crystallites Crystallization Crystallography and Scattering Methods Current carriers Electrical properties Electronic Materials Glass ceramics Glass transition temperature Heat treatment Hopping conduction Materials Science Nanocrystals Polymer Sciences Solid Mechanics Tellurium dioxide Temperature Thermal analysis Thermoelectric materials Vanadium pentoxide |
| title | Enhancing electrical properties through in-situ controlled nanocrystallization of V2O5–TeO2 glass |
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