Fabrication and augmentation of optical and structural characteristics of PVA/SiC/CoFe2O4 hybrid nanocomposites for tailored optical and quantum electronics applications

• Published in: Optical and quantum electronics 2024-06, Vol.56 (7), Article 1177
• Main Authors: Hashim, Ahmed, Ibrahim, Hamed, Hadi, Aseel
• Format: Article
• Language: English
• Subjects: Absorbance; Characterization and Evaluation of Materials; Cobalt ferrites; Computer Communication Networks; Electrical Engineering; Electronics; Energy gap; Fourier transforms; Lasers; Morphology; Nanocomposites; Nanoelectronics; Nanomaterials; Nanostructure; Near infrared radiation; Optical Devices; Optical microscopes; Optical properties; Optics; Photonics; Physics; Physics and Astronomy; Polyvinyl alcohol; Quantum electronics; Silicon carbide; Spectrum analysis; Ultraviolet spectra
• ISSN: 1572-817X; 0306-8919; 1572-817X
• DOI: 10.1007/s11082-024-07141-9

In the current work, fabrication of silicon carbide (SiC)/cobalt ferrite (CoFe 2 O 4 )/polyvinyl alcohol(PVA) nanostructures was investigated as a promising hybrid nanomaterials to utilize in the advanced optical and nanoelectronics applications. The SiC/CoFe 2 O 4 NPs addition into PVA was created of new nanostructures have excellent optical properties, inexpensive, greater physical and chemical characteristics when compared with other nanocomposites. The structural, morphological and optical characteristics of PVA/SiC/CoFe 2 O 4 films were tested. The structural and morphological characteristics involved Fourier-Transform Infrared spectroscopy and optical microscope. The results confirmed that the absorbance of PVA/SiC/CoFe 2 O 4 films is elevated at Ultraviolet spectrum and near infrared spectrum. The PVA absorbance boosted about 94.6% at λ = 340 nm (UV-S) while the reduce of transmittance about 72.4% when the SiC/CoFe 2 O 4 content reached of 6.3 wt.%. This performance makes the PVA/SiC/CoFe 2 O 4 films are promising nanostructures for UV-shielding and other optical and electronics applications. The energy gap of PVA was decreased from 5.1 to 2.3 eV for allowed transition and from 4.7 to 0.6 eV for transition of forbidden when the SiC/CoFe 2 O 4 NPs content reached of 6.3 wt.%., and these results made the PVA/SiC/CoFe 2 O 4 films are welcomed in the optical and electronics fields. The other optical parameters of PVA were improved with growing SiC/CoFe 2 O 4 NPs content; these results are appropriate for many optical fields. Finally, the attained results indicated that the PVA/SiC/CoFe 2 O 4 films can be useful for promising optical, photonics and electronics applications.