Gallium Selenide Thin Films Grown on Silicon by Plasma-Enhanced Chemical Vapor Deposition

Gallium selenide (GaSe) thin films on silicon(111) have been first grown by plasma-enhanced chemical vapor deposition (PECVD) using high-purity elemental gallium and selenium as the precursors. The reactive plasma components formed in the gas phase have been studied by optical emission spectroscopy....

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Bibliographic Details
Published in:High energy chemistry 2024-08, Vol.58 (4), p.440-445
Main Authors: Kudryashov, M. A., Mochalov, L. A., Kudryashova, Yu. P., Slapovskaya, E. A.
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Gallium selenides
Grain size
Optical emission spectroscopy
Physical Chemistry
Plasma Chemistry
Plasma enhanced chemical vapor deposition
Plasma jets
Silicon substrates
Stoichiometry
Thin films
Vapor phases
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Summary:Gallium selenide (GaSe) thin films on silicon(111) have been first grown by plasma-enhanced chemical vapor deposition (PECVD) using high-purity elemental gallium and selenium as the precursors. The reactive plasma components formed in the gas phase have been studied by optical emission spectroscopy. All grown films have a stoichiometry similar to that of GaSe. An increase in the plasma discharge power to 50 W and higher leads to the formation of an ε-GaSe phase, an improvement in the structural quality of the films, and an increase in the grain sizes with simultaneous grain compaction.
ISSN:0018-1439
1608-3148
DOI:10.1134/S0018143924700309