Insights into High-Dose Helium Implantation of Silicon

The paper reports an analysis of surface morphology variation and cavity pattern formation in silicon single crystal induced by ion implantation and post-implantation annealing in different regimes. Critical implantation doses required to promote surface erosion are determined for samples subjected...

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Bibliographic Details
Published in:Crystallography reports 2024-06, Vol.69 (3), p.380-389
Main Authors: Aleksandrov, P. A., Emelyanova, O. V., Shemardov, S. G., Khmelenin, D. N., Vasiliev, A. L.
Format: Article
Language:English
Subjects:
Annealing
Crystallography and Scattering Methods
Flaking
Helium ions
Ion implantation
Morphology
Pattern analysis
Physics
Physics and Astronomy
Silicon
Single crystals
Surface and Thin Films
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Summary:The paper reports an analysis of surface morphology variation and cavity pattern formation in silicon single crystal induced by ion implantation and post-implantation annealing in different regimes. Critical implantation doses required to promote surface erosion are determined for samples subjected to post-implantation annealing and in absence of post-implantation treatment. For instance, implantation with helium ions to fluences below 3 × 10 17 He + /cm 2 without post-implantation annealing does not affect the surface morphology; while annealing of samples implanted with fluences of 2 × 10 17 He + /cm 2 and higher promotes flaking.
ISSN:1063-7745
1562-689X
DOI:10.1134/S1063774524600340