Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes

There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at 1550nm) with silicon to fabricate photodiodes, leveraging epitaxia...

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Bibliographic Details
Published in:arXiv.org 2024-07
Main Authors: Muduli, Manisha, Xia, Yongkang, Lee, Seunghyun, Gajowski, Nathan, Chae, Chris, Rajan, Siddharth, Hwang, Jinwoo, Arafin, Shamsul, Krishna, Sanjay
Format: Article
Language:English
Subjects:
C band
Electric potential
Heterostructures
Microscopy
Photodiodes
Photoelectric effect
PIN diodes
Room temperature
Silicon substrates
Transfer printing
Voltage
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Summary:There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at 1550nm) with silicon to fabricate photodiodes, leveraging epitaxial layer transfer (ELT) methods. Two ELT techniques, epitaxial lift-off (ELO) and macro-transfer printing (MTP), are compared for transferring GaAsSb films from InP substrates to Si, forming PIN diodes. Characterization through atomic force microscopy (AFM), and transmission electron microscopy (TEM) exhibits a high-quality, defect-free interface. Current-voltage (IV) measurements and capacitance-voltage (CV) analysis validate the quality and functionality of the heterostructures. Photocurrent measurements at room temperature and 200 K demonstrate the device's photo-response at 1550 nm, highlighting the presence of an active interface.
ISSN:2331-8422