P‐28: High‐speed Oscillator using Polycrystalline InGaO TFTs by Spray Pyrolysis on Polyimide Substrate for Flexible Electronics

We demonstrate high‐performance coplanar thin film transistors (TFTs) on polyimide (PI) substrate, with very thin polycrystalline InGaO (poly‐IGO) thin films deposited by spray‐pyrolysis. The TFTs exhibit saturation mobility (µSAT) of ~39.25 ± 0.73 cm2 V−1 s−1, with excellent uniformity and stable b...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2024-06, Vol.55 (1), p.1463-1466
Main Authors: Rabbi, Md. Hasnat, Ali, Arqum, Bae, Jinbaek, Tooshil, Abul, Park, Chanju, Jang, Jin
Format: Article
Language:English
Subjects:
coplanar TFT
Delay time
Flexible components
flexible electronics
high mobility and high stability
InGaO
Oscillators
Polycrystalline oxide
Polycrystals
polyimide substrate
Semiconductor devices
Spray pyrolysis
Substrates
Thin film transistors
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Summary:We demonstrate high‐performance coplanar thin film transistors (TFTs) on polyimide (PI) substrate, with very thin polycrystalline InGaO (poly‐IGO) thin films deposited by spray‐pyrolysis. The TFTs exhibit saturation mobility (µSAT) of ~39.25 ± 0.73 cm2 V−1 s−1, with excellent uniformity and stable bias stabilities (ΔVTH = +0.3 V for PBTS, ΔVTH = −0.3 V for NBTS). The 7‐stage ring oscillator made of the corresponding TFTs exhibits a very high oscillation frequency of 9.09 MHz at VDD of 15 V with ultra‐low propagation delay time of 7.86 ns/stage.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.17827