P‐30: Effect of High‐k Oxide Materials on Amorphous Indium Gallium Zinc Oxide (α‐IGZO) Channel in Top Gate Field Effect Transistors

The gate dielectric plays a significant role in improving the electrical performance of field‐effect transistors. Here, we integrated high‐k and low‐k bilayer gate dielectrics with (~10 nm) α‐IGZO FETs. Our results show that HfO2/SiO2 gated devices provide high electron mobility due to higher carrie...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2024-06, Vol.55 (1), p.1471-1473
Main Authors: Alshanbari, Reem, Durnan, Oliver, Guo, Huaiqian, Eizenberg, Moshe, Kymissis, Ioannis
Format: Article
Language:English
Subjects:
Amorphous materials
Bilayers
Carrier density
Dielectrics
Electron mobility
Field effect transistors
Gallium
High‐k dielectrics
IGZO
Indium gallium zinc oxide
PECVD
Semiconductor devices
Silicon dioxide
Zinc oxide
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Summary:The gate dielectric plays a significant role in improving the electrical performance of field‐effect transistors. Here, we integrated high‐k and low‐k bilayer gate dielectrics with (~10 nm) α‐IGZO FETs. Our results show that HfO2/SiO2 gated devices provide high electron mobility due to higher carrier concentration and lower trap density at the semiconductor‐gate dielectric interface.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.17829