30‐2: Hydrogen Contents Controlled Silicon Nitride Passivation Layer for Highly Reliable IGZO Thin Film Transistor

To achieve a highly reliable IGZO transistor, silicon nitride thin film, as a passivation layer, has been extensively investigated in recent years, mainly due to readily available fabrication, along with good barrier performance. Here, we found out that larger amount hydrogen residuals was observed...

Full description

Saved in:
Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2024-06, Vol.55 (1), p.386-389
Main Authors: Lee, Bokyoung, Kim, Yongil, Bang, Jungho, Nam, Seung Hee, Noh, Ji Yong, Park, Kwon-Shik, Yoon, Soo Young
Format: Article
Language:English
Subjects:
Chemical composition
Chemical vapor deposition
Electrical properties
Hydrogen
Hydrogen ions
IGZO
Indium gallium zinc oxide
Oxide
Passivation layer
Passivity
PECVD
Silicon nitride
Silicon nitride thin film
Thin films
Transistors
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:To achieve a highly reliable IGZO transistor, silicon nitride thin film, as a passivation layer, has been extensively investigated in recent years, mainly due to readily available fabrication, along with good barrier performance. Here, we found out that larger amount hydrogen residuals was observed in the PECVD deposited SiNx passivation layer, more stable the IGZO oxide device exhibited, which is abnormal behavior to that commonly known in the literatures. Given that FT‐IR and SIMS analysis with various controlled SiNx thin film upon different deposition conditions, the plasma parameters such as power, pressure, source gas ratio could affect hydrogen ion diffusivity into the IGZO layer during the deposition and the chemical composition of hydrogen residuals in the resulting SiNx layer, which is more dominant, rather than absolute hydrogen contents itself, to the initial electrical properties as well the stability of the IGZO transistor device.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.17538