Correction: Impact of Pocket Layer on Linearity and Analog/RF Performance of InAs-GaSb Vertical Tunnel Field-Effect Transistor

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Bibliographic Details
Published in:Journal of electronic materials 2024-09, Vol.53 (9), p.5738-5738
Main Authors: Saravanan, M., Parthasarathy, Eswaran
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Correction
Electronics and Microelectronics
Field effect transistors
Instrumentation
Materials Science
Optical and Electronic Materials
Semiconductor devices
Solid State Physics
Online Access:Get full text
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ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-024-11305-4