Miniaturized AlGaN‐Based Deep‐Ultraviolet Light‐Emitting and Detecting Diode with Superior Light‐Responsive Characteristics

The progressive downscaling of silicon‐based microelectronic devices delivers compact and advanced integrated circuits for fast data processing and computing. Similarly, the miniaturization of conventional optoelectronics is also an important frontier of technology for emerging lighting, imaging, co...

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Bibliographic Details
Published in:Advanced optical materials 2024-08, Vol.12 (22), p.n/a
Main Authors: Yu, Huabin, Memon, Muhammad Hunain, Wang, Rui, Xiao, Shudan, Li, Dong, Luo, Yuanmin, Wang, Danhao, Gao, Zhixiang, Yao, Jikai, Shen, Chao, Li, Shuiqing, Zheng, Jinjian, Zhang, Jiangyong, Ooi, Boon S., Liu, Sheng, Sun, Haiding
Format: Article
Language:English
Subjects:
Communications systems
Data processing
deep ultraviolet
gallium nitride
Integrated circuits
micro‐LED
micro‐PD
monolithic integration
optical communication
Optoelectronics
Quantum efficiency
Ultraviolet radiation
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Summary:The progressive downscaling of silicon‐based microelectronic devices delivers compact and advanced integrated circuits for fast data processing and computing. Similarly, the miniaturization of conventional optoelectronics is also an important frontier of technology for emerging lighting, imaging, communication, and sensing. Herein, this study reports a miniature dual‐functional diode (DF‐diode) with both light‐emitting and light‐detecting functionalities. The proposed micro‐scale DF‐diode exhibits a record high responsivity of 300 mA W−1 at 265 nm with an ultrafast response rise time of 3.7 ns in light‐detecting mode. While operating in emitting mode, it demonstrates an extraordinarily high −3 dB optical bandwidth above 585 MHz with an enhanced external quantum efficiency performance. Significantly, the development of micro‐scale DF‐diodes has opened up a new avenue toward the realization of an effective and long‐distance solar‐blind optical communication system in the future. This study reports a miniature dual‐functional diode (DF‐diode) with light‐emitting and light‐detecting functionalities. The proposed micro‐scale DF‐diode exhibits a high responsivity of 300 mA W−1 at 265 nm with an ultrafast response rise time of 3.7 ns in light‐detecting mode. While operating in emitting mode, it demonstrates a high −3 dB optical bandwidth above 585 MHz with an enhanced external quantum efficiency performance.
ISSN:2195-1071
2195-1071
DOI:10.1002/adom.202400499