Electrical properties of unintentionally doped β-Ga2O3 (010) thin films grown by a low-pressure hot-wall metalorganic chemical vapor deposition

We investigated the electrical properties of unintentionally doped (UID) Ga2O3 (010) layers grown by low-pressure hot-wall metalorganic chemical vapor depositions from device characteristics of Schottky barrier diodes (SBDs) fabricated on them. Highly resistive properties of the UID Ga2O3 layers wer...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2024-08, Vol.63 (8), p.080901
Main Authors: Morihara, Jun Jason, Inajima, Jin, Wang, Zhenwei, Yoshinaga, Junya, Sato, Shota, Eguchi, Kohki, Tsutsumi, Takuya, Kumagai, Yoshinao, Higashiwaki, Masataka
Format: Article
Language:English
Subjects:
Capacitance-voltage characteristics
Current voltage characteristics
Electrical properties
gallium oxide (Ga
Gallium oxides
Low pressure
metal organic chemical vapor deposition (MOCVD)
Metalorganic chemical vapor deposition
schottky barrier diode
Schottky diodes
Thin films
unintentionally doped
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Summary:We investigated the electrical properties of unintentionally doped (UID) Ga2O3 (010) layers grown by low-pressure hot-wall metalorganic chemical vapor depositions from device characteristics of Schottky barrier diodes (SBDs) fabricated on them. Highly resistive properties of the UID Ga2O3 layers were confirmed from current–voltage characteristics. The specific on-resistance of the SBD with the most resistive UID Ga2O3 layer was 2.2 × 107 Ωcm2. Capacitance–voltage characteristics revealed that most of the SBDs had complete depletion of the UID layers at thermal equilibrium, indicating that their residual effective donor densities were less than 3.0 × 1013 cm−3.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ad6542