Protons: Critical Species for Resistive Switching in Interface‐Type Memristors (Adv. Electron. Mater. 1/2023)

In article number 2200816, Sundar Kunwar, Aiping Chen, and co‐workers demonstrate how protons/moisture‐mediated charge trapping/detrapping controls resistive switching in interface‐type memristors, which are promising for next generation memory and computing technologies owing to the filamentfree sw...

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Bibliographic Details
Published in:Advanced electronic materials 2023-01, Vol.9 (1), p.n/a
Main Authors: Kunwar, Sundar, Somodi, Chase Bennett, Lalk, Rebecca A., Rutherford, Bethany X., Corey, Zachary, Roy, Pinku, Zhang, Di, Hellenbrand, Markus, Xiao, Ming, MacManus‐Driscoll, Judith L., Jia, Quanxi, Wang, Haiyan, Joshua Yang, J., Nie, Wanyi, Chen, Aiping
Format: Article
Language:English
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Summary:In article number 2200816, Sundar Kunwar, Aiping Chen, and co‐workers demonstrate how protons/moisture‐mediated charge trapping/detrapping controls resistive switching in interface‐type memristors, which are promising for next generation memory and computing technologies owing to the filamentfree switching, high on/off ratio, low power consumption, and spatial variability.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.202370004