Investigation of Analog/RF behaviour of Asymmetrical Gate Tunnel FET at Cryogenic temperatures

This paper extensively sheds light on the performance of an Asymmetrical-gate Tunnel FET (A-TFET) under cryogenic temperatures (

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Bibliographic Details
Published in:SILICON 2024-07, Vol.16 (11), p.4753-4762
Main Authors: Misra, Sinjini, Bose, Chandreyee, Ghosh, Rittik, Saha, Priyanka
Format: Article
Language:English
Subjects:
Ambient temperature
Asymmetry
Carrier transport
Chemistry
Chemistry and Materials Science
Cryogenic temperature
Environmental Chemistry
Field effect transistors
Inorganic Chemistry
Investigations
Lasers
Materials Science
Optical Devices
Optics
Photonics
Polymer Sciences
Quantum computing
Real time
Transconductance
Tunnels
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Description
Summary:This paper extensively sheds light on the performance of an Asymmetrical-gate Tunnel FET (A-TFET) under cryogenic temperatures (
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-024-03049-x