Optimized 750V SiC MOSFETs for Electric Vehicle Inverter Operation

We report an AEC-Q101-qualified 750V, 15 mΩ planar SiC MOSFETs with a long short circuit withstand time (SCWT) of > 9μs at VDS=400V and VGS=15V and a low specific on-resistance (RON,SP) of 2.1 mΩ.cm2 at VGS=15V designed for xEV traction inverter applications. The RDS(on) at VGS=15V increases from...

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Bibliographic Details
Published in:Key engineering materials 2023-05, Vol.945, p.67-70
Main Authors: Bui-Quang, Phong, Ding, Yu, Salemi, Arash, Sheridan, David, Liu, Alvin, Zhu, Bob, Chatty, Kiran
Format: Article
Language:English
Subjects:
Electric vehicles
Inverters
MOSFETs
Short circuits
Silicon carbide
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Summary:We report an AEC-Q101-qualified 750V, 15 mΩ planar SiC MOSFETs with a long short circuit withstand time (SCWT) of > 9μs at VDS=400V and VGS=15V and a low specific on-resistance (RON,SP) of 2.1 mΩ.cm2 at VGS=15V designed for xEV traction inverter applications. The RDS(on) at VGS=15V increases from 15mΩ at 25 °C to 21 mΩ at 175 °C. A low turn-on (EON) and turn-off (EOFF) switching energy loss of 95.5μJ and 67μJ at IDS=75A, VDS=400V was measured at 25 °C. The gate oxide lifetime at worst case operating fields of 5MV/cm is >> 20 years.
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/p-6yitf5