Successful electric field modulation to enhance DC and RF features in SOI LDMOS transistors using a β-Ga2O3 film

• Published in: Journal of materials science. Materials in electronics 2024-08, Vol.35 (23), p.1566, Article 1566
• Main Authors: Sohrabi-Movahed, Amir, Orouji, Ali A.
• Format: Article
• Language: English
• Subjects: Buried structures; Characterization and Evaluation of Materials; Chemistry and Materials Science; Direct current; Electric fields; Gallium oxides; Heat conductivity; High temperature effects; Materials Science; Metal oxide semiconductors; Metal oxides; Modulation; Optical and Electronic Materials; Power gain; Silica; Silicon; SOI (semiconductors); Transistors
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-024-13278-w

In this paper, a successful electric field modulation in Lateral Double-diffused Metal Oxide Semiconductor (LDMOS) transistors to enhance the electrical characteristics is presented. A β-Ga 2 O 3 film in the drift region is incorporated. The β-Ga 2 O 3 film leads to a more efficient electric field modulation and enhances the DC and RF capabilities. Also, a Silicon layer is embedded in the buried oxide of the proposed structure to improve self-heating effects. Overall, the proposed β-Ga 2 O 3 film in SOI LDMOS (βF-LDMOS) structure offers improved performances in terms of electric field distribution, maximum available power gain, unilateral power gain, gate-drain capacitance, breakdown voltage, and maximum lattice temperature. This makes it a promising candidate for RF power applications requiring high voltage and high power handling capabilities.