Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications

A 300-mm GaN-on-Si(111) high- k gate dielectric E-mode GaN MOSHEMT technology is demonstrated with uniform process and wafer characteristics. The E-mode GaN MOSHEMT of L_{\mathrm{G}} = 90 nm, L_{\mathrm{GS}} = L_{\mathrm{GD}} = 80 nm, is enabled by 300-mm process capabilities in deep U...

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Bibliographic Details
Published in:IEEE microwave and wireless technology letters (Print) 2023-06, Vol.33 (6), p.1-4
Main Authors: Then, Han Wui, Radosavljevic, M., Yu, Q., Latorre-Rey, A., Vora, H., Bader, S., Momson, I., Thomson, D., Beumer, M., Koirala, P., Peck, J., Oni, A., Hoff, T., Jordan, R., Michaelos, T., Nair, N., Nordeen, P., Vyatskikh, A., Ban, I., Zubair, A., Rami, S., Fischer, P.
Format: Article
Language:English
Subjects:
300-mm GaN-on-Si
Amplification
Atomic layer epitaxy
CMOS
Copper
enhancement mode
GaN MOSHEMT
HEMTs
high-<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> k</tex-math> </inline-formula> gate dielectric
High-k dielectric materials
Logic gates
Millimeter waves
mm-Wave PA
Power amplifiers
Radio frequency
Semiconductor device modeling
Silicon
Transistors
Wave power
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Summary:A 300-mm GaN-on-Si(111) high- k gate dielectric E-mode GaN MOSHEMT technology is demonstrated with uniform process and wafer characteristics. The E-mode GaN MOSHEMT of L_{\mathrm{G}} = 90 nm, L_{\mathrm{GS}} = L_{\mathrm{GD}} = 80 nm, is enabled by 300-mm process capabilities in deep U (DUV) lithography, MOCVD, atomic layer etch (ALE), atomic layer deposition (ALD), and Cu interconnect. The GaN MOSHEMT shows excellent on/off characteristics, low leakages, low R_{\mathrm{on}} , high I_{\mathrm{D}} , and f_{T} / f_{\mathrm{MAX}} of 140/280 GHz. A 42-GHz mm-Wave power amplifier (PA) fabricated in this process for the first time demonstrates a saturated power of 25.6 dBm, a linear gain of 22.5 dB, and a PAE of 35.7%. In this technology, high f_{T} / f_{\mathrm{MAX}} is obtained by scaling to thin equivalent oxide thickness (EOT) and short L_{\mathrm{G}} , and high breakdown is achieved with extended L_{\mathrm{GD}} and field plating. Si CMOS can be integrated with this GaN technology using 3-D layer transfer and does not alter the RF performance of the GaN MOSHEMT. Record f_{\mathrm{MAX}} = 700 GHz ( f_{T} =
ISSN:2771-957X
2771-9588
DOI:10.1109/LMWT.2023.3268184