Analysis of the Single-Event Latch-Up Cross section of a 16 nm FinFET System-on-Chip Using Backside Single-Photon Absorption Laser Testing and Correlation With Heavy Ion Data

The single-event latch-up (SEL) cross section of a 16 nm bulk finFET programmable system-on-chip (SoC) is investigated by combining single-photon absorption (SPA) laser testing, emission microscopy (EMMI), and embedded instrumentation. The contributions of different SEL-sensitive areas identified by...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2024-08, Vol.71 (8), p.1645-1653
Main Authors: Fongral, M., Pouget, V., Saigne, F., Ruffenach, M., Carron, J., Malou, F., Mekki, J.
Format: Article
Language:English
Subjects:
Absorption
Absorption cross sections
Bulk finFET
Emission measurements
Emission microscopy
FinFETs
Heavy ions
Instrumentation
Lasers
Latch-up
Light emission
Measurement by laser beam
Monitoring
Photon absorption
Photons
Power supplies
pulsed laser testing
Sensitivity analysis
single-event latch-up (SEL)
Software
System on chip
system-on-chip (SoC)
Technology assessment
Temperature effects
Temperature measurement
Testing
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Description
Summary:The single-event latch-up (SEL) cross section of a 16 nm bulk finFET programmable system-on-chip (SoC) is investigated by combining single-photon absorption (SPA) laser testing, emission microscopy (EMMI), and embedded instrumentation. The contributions of different SEL-sensitive areas identified by their current increase, light emission, and functional signatures are measured. The effect of temperature and IO bias is evaluated. The laser results show an excellent correlation with heavy ion data and delimit the origin of SEL in this device by excluding the occurrence of SEL in the core logic for this technology.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2024.3380670