An investigation on optical properties of CdZnte substrate by laser irradiation

Cadmium Zinc Telluride (Cd0.96Zn0.04Te) single crystals grown by Vertical Bridgman technique possess good structural quality and low defect density. Such CdZnTe crystals can be used as substrate to find applications in fabricating Infrared (IR) detectors. In this paper we discuss results obtained on...

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Bibliographic Details
Main Authors: Garg, Preeti, Pandey, Akhilesh, Raman, R.
Format: Conference Proceeding
Language:English
Subjects:
Bridgman method
Cadmium zinc tellurides
Crystal defects
Crystal growth
Defect annealing
Exposure
Infrared detectors
Infrared lasers
Laser beam heating
Optical properties
Photoluminescence
Single crystals
Substrates
Tellurium
Zinc tellurides
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Summary:Cadmium Zinc Telluride (Cd0.96Zn0.04Te) single crystals grown by Vertical Bridgman technique possess good structural quality and low defect density. Such CdZnTe crystals can be used as substrate to find applications in fabricating Infrared (IR) detectors. In this paper we discuss results obtained on effect of laser (~532nm) exposure on the Raman and Photoluminescence (PL) spectrum over polished and annealed CdZnTe substrates. The incident laser power causes the increase in Raman signal of Tellurium in CdZnTe substrate and PL emission diminishes due to the burning of semiconducting material. After laser exposure of 3 mW due to localized heating only Te element left at the laser exposure area, therefore prominent Raman modes A1 (122 cm−1) and E1 (142 cm−1) appeared in the sample. Raman and PL mapping confirms the formation of Te-Te bond near the laser exposure area at the CdZnTe substrate.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0224554