Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1−x)2−yTe3

We report the growth, structural characterization, and transport properties of the quantum anomalous Hall insulator Vy(BixSb1−x)2−yTe3 (VBST) grown on a GaAs buffer layer by molecular beam epitaxy on a GaAs(111)A substrate. X-ray diffraction and transmission electron microscopy show that the impleme...

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Bibliographic Details
Published in:Applied physics letters 2024-08, Vol.125 (8)
Main Authors: Nakazawa, Yusuke, Akiho, Takafumi, Kanisawa, Kiyoshi, Irie, Hiroshi, Kumada, Norio, Muraki, Koji
Format: Article
Language:English
Subjects:
Buffer layers
Coercivity
Crystal growth
Epitaxial growth
Gallium arsenide
Magnetic properties
Magnetization reversal
Molecular beam epitaxy
Quantum Hall effect
Structural analysis
Structural stability
Substrates
Thermal stability
Transport properties
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Summary:We report the growth, structural characterization, and transport properties of the quantum anomalous Hall insulator Vy(BixSb1−x)2−yTe3 (VBST) grown on a GaAs buffer layer by molecular beam epitaxy on a GaAs(111)A substrate. X-ray diffraction and transmission electron microscopy show that the implementation of a GaAs buffer layer improves the crystal and interface quality compared to the control sample grown directly on an InP substrate. Both samples exhibit the quantum anomalous Hall effect (QAHE), but, with similar thermal stability despite their different structural properties. Notably, the QAHE in the sample grown on a GaAs buffer layer displays a significantly larger (almost double) coercive field with a much smaller resistivity peak at magnetization reversal. Possible effects of the interface quality on the magnetic properties of VBST and the QAHE are discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0215875