Robust Giant Tunnel Electroresistance and Negative Differential Resistance in 2D Semiconductor/α‐In2Se3 Ferroelectric Tunnel Junctions (Adv. Funct. Mater. 34/2024)

Ferroelectric Tunnel Junctions In article number 2407253, Qijie Liang, Changjian Zhou, and co‐workers demonstrate that the integration of 2D semiconducting electrodes and ferroelectrics leads to temperature‐independent ferroelectric tunnel junctions with giant tunnel electroresistance, negative diff...

Full description

Saved in:
Bibliographic Details
Published in:Advanced functional materials 2024-08, Vol.34 (34), p.n/a
Main Authors: Luo, Yingjie, Chen, Jiwei, Abbas, Aumber, Li, Wenbo, Sun, Yueyi, Sun, Yihong, Yi, Jianxian, Lin, Xiankai, Qiu, Guitian, Wen, Ruolan, Chai, Yang, Liang, Qijie, Zhou, Changjian
Format: Article
Language:English
Subjects:
2D semiconductors
Electrodes
Ferroelectric materials
ferroelectric tunnel junctions
Ferroelectricity
negative differential resistance
nonvolatile memory
Tunnel junctions
α‐In2Se3
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ferroelectric Tunnel Junctions In article number 2407253, Qijie Liang, Changjian Zhou, and co‐workers demonstrate that the integration of 2D semiconducting electrodes and ferroelectrics leads to temperature‐independent ferroelectric tunnel junctions with giant tunnel electroresistance, negative differential resistance, enhanced robustness, and gate programmability. These findings offer critical insights into attaining superior performance by implementing diverse electrodes, showing substantial potential in memristive and in‐memory computing applications.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.202470195