Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition

Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall (QSH) insulators are considered advanced logic transistors due to their potentially superior performance originating from the dissipationless edge transport. This article presents a device modeling based on the ti...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2024-09, Vol.71 (9), p.5739-5743
Main Authors: Park, Yungyeong, Park, Yosep, Choi, Hyeonseok, Lim, Subeen, Kim, Dongwook, Lee, Yeonghun
Format: Article
Language:English
Subjects:
Band structures
Binding
Current voltage characteristics
Electric fields
Field effect transistors
Field-effect transistors (FETs)
Green's function methods
Green's functions
Logic gates
Modelling
nonequilibrium Green’s function (NEGF) formalism
Performance evaluation
Phase transitions
quantum spin Hall (QSH) effect
Scattering
Semiconductor devices
tight binding
topological insulator
Topological insulators
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall (QSH) insulators are considered advanced logic transistors due to their potentially superior performance originating from the dissipationless edge transport. This article presents a device modeling based on the tight-binding (TB) model and the nonequilibrium Green's function (NEGF) formalism to simulate the current-voltage characteristics of the TIFETs. We then use the device simulator to demonstrate the effect of channel length on device performance. The device modeling will not only enable direct estimation of TIFET performance but also shed light on the nontraditional switching operation via the topological phase transition.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2024.3427091