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In-depth characterization of physical proprieties of SnS:Mg thin films fabricated by ultrasonic spray for solar cell applications

Ultrasonic spray pyrolysis (USP) technique has been used to deposit pure and magnesium (Mg) incorporation Tin Sulphide (SnS:Mg) thin films at 350 °C by varying the Mg impurities concentration (2%, 4%, 6% and 8%). X -ray diffraction patterns confirms the orthorhombic crystal structure of SnS:Mg thin...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2024-08, Vol.35 (24), p.1632, Article 1632
Main Authors: Hadef, Zakaria, Kamli, Kenza, Akkari, Anis, Hadjoudja, Hani, Kamoun, Najoua Turki, Kamli, Ouarda, Djarmoune, Atmane, Merzeg, Farid Ait
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Language:English
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Summary:Ultrasonic spray pyrolysis (USP) technique has been used to deposit pure and magnesium (Mg) incorporation Tin Sulphide (SnS:Mg) thin films at 350 °C by varying the Mg impurities concentration (2%, 4%, 6% and 8%). X -ray diffraction patterns confirms the orthorhombic crystal structure of SnS:Mg thin films. Structural parameters such as crystallite size, microstrain and dislocation density were determinated. SEM images displayed the influence affected of SnS films surface morphology by the change of Mg incorporation concentration. The optical band gap energy were determinated by measuring the transmission which showed a low value of 1.59 eV with a strong emission peak of photoluminescence spectra observed at 421 nm for 6% of Mg incorporation concentration. Hall Effect measurement confirm the p-type conductivity of the SnS:Mg film and presented a very low resistivity of 1.58 × 10 −2 Ω cm with the high mobility of 21.54 cm 2 /Vs and very high carrier concentration of 1.47 × 10 19  cm −3 for 6 at.% of SnS:Mg thin film. Morevere, FTO/n-SnS 2 /p-SnS:Mg/Ag heterostructure based solar cells using 6% Mg incorporation concentration was analyzed and their current–voltage characteristic under dark and illumination conditions was investigated.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-024-13370-1