Optimizing the performance of Inverted FASnI3-based perovskite solar cells by device simulation

The tin-based PSCs (perovskite solar cells), with low toxicity and excellent photovoltaic properties, offer a promising solution to lead environmental pollution and toxicity issues, emerging as a strong substitute for environmentally friendly lead-free PSCs. However, tin-based PSCs still face signif...

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Bibliographic Details
Published in:Journal of physics. Conference series 2024-08, Vol.2826 (1), p.012010
Main Authors: Xu, Zhiqi, Qin, Qi
Format: Article
Language:English
Subjects:
Defects
Density
Doping
Electron affinity
Energy conversion efficiency
Lead free
Parameters
Perovskites
Photovoltaic cells
Power management
Solar cells
Thickness
Toxicity
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Summary:The tin-based PSCs (perovskite solar cells), with low toxicity and excellent photovoltaic properties, offer a promising solution to lead environmental pollution and toxicity issues, emerging as a strong substitute for environmentally friendly lead-free PSCs. However, tin-based PSCs still face significant challenges in terms of low power conversion efficiency and poor long-term stability. Therefore, in-depth research on tin-based PSCs is required to further enhance their performance. In this study, we utilize SCAPS-1D to simulate the currently efficient inverted FASnI3-based PSCs and determine the PSCs device parameters that are as close as possible to the results in published experiments. The simulation results indicate that the parameter adjustment of the absorption layer plays a vital role in the inverted device. Those parameters are thickness, defect density, and doping concentration. Similarly, parameter variations of other layers (parameters such as electron affinity, thickness, and doping concentration) and interfaces (parameters are defect density at different interfaces) are considered. We achieve a final optimized simulated device power conversion efficiency of 18.219%. This research aims to contribute to the future development of inverted FASnI3-based PSCs.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2826/1/012010