Photon emission microscope analysis on surface defects of GaAs thin-film solar cells grown by molecular beam epitaxy

Surface defects seriously affect the electronic properties of the optoelectronic devices. In this paper, the surface defect analysis of GaAs thin-film solar cells grown by molecular beam epitaxy is carried out by a photon emission microscope. Two types of oval defects at the locations of the luminou...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2024-08, Vol.63 (8), p.86504
Main Authors: Chen, Xiaoling, Bao, Yidi, Ji, Chunxue, Li, Ye, Yang, Guiqiang, Liu, Wen, Liu, Qing, Yang, Fuhua, Wang, Xiaodong
Format: Article
Language:English
Subjects:
As clusters
Chemical composition
Cluster analysis
Emission analysis
Epitaxial growth
GaAs dust contamination
GaAs thin-film solar cells
Gallium arsenide
Leakage current
MBE
Molecular beam epitaxy
Optoelectronic devices
oval defects
PEM
Photon beams
Photon emission
Photons
Photovoltaic cells
Solar cells
Surface defects
Thin films
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Summary:Surface defects seriously affect the electronic properties of the optoelectronic devices. In this paper, the surface defect analysis of GaAs thin-film solar cells grown by molecular beam epitaxy is carried out by a photon emission microscope. Two types of oval defects at the locations of the luminous spots are observed. The morphology and chemical composition analysis indicates that GaAs dust contamination on the wafer surface and excessive As clusters are the origins of oval defects. The electrical property analysis shows that oval defects in the epitaxial layer should be one of the important reasons for the nonideal leakage current of the GaAs thin-film solar cell.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ad6964