Electrical behaviors of the MXene nanoflower interlayered heterojunction Schottky photodiode devices

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2024, Vol.130 (9)
• Main Authors: Gurbuz, Havva Nur, Hussaini, Ali Akbar, Ipekci, Hasan Huseyin, Durmaz, Fatih, Uzunoglu, Aytekin, Yıldırım, Murat
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Condensed Matter Physics; Heterojunctions; Interlayers; Machines; Manufacturing; MXenes; Nanotechnology; Optical and Electronic Materials; Photodiodes; Physics; Physics and Astronomy; Processes; Surface properties; Surfaces and Interfaces; Thermionic emission; Thin Films; Two dimensional materials; Ultrasonic processing; X ray photoelectron spectroscopy
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-024-07823-x

Schottky-type photodiodes’ quick responsiveness to light has attracted great attention worldwide. To increase their efficiency as electrodes or interlayers, a variety of materials have been employed. Two-dimensional materials such as MXene with an impressive ability to efficiently absorb light have been at the core of studies. On the other hand, the restacking challenge of 2-D materials poses important drawbacks limiting the benefit of their surface properties and large surface area. Preparation of 3-D materials using 2-D counterparts has been widely employed to alleviate the restacking problem. In this study, we synthesized 3-D V 2 C MXenes nanoflowers via a simple ultrasonic treatment followed by a freeze-drying process. The 3-D V 2 C MXenes nanoflowers were characterized by SEM, EDS, XRD, FT-IR, and XPS. The 3-D V 2 C MXenes nanoflowers were implemented as interlayers onto p -type and n -type Si wafers. The V 2 C MXenes/ p -Si device has shown an excellent rectification ratio. The devices were measured under various illumination intensities. Electrical parameters were calculated via thermionic emission, Cheung, and Norde methods.