Indium-doped ZnO nanoparticle effects on the optical and electrical characterization under dark and illumination of OFET: application for optoelectronics and nonvolatile memory devices

Organic field-effect transistors (OFETs), based on poly(3-hexylthiophene) (P3HT) enriched by indium-doped zinc oxide (IZO) nanoparticles as an active layer, were successfully prepared by the spin-coating method. We report a significant impact of IZO nanoparticles on the P3HT carrier mobility, which...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials science 2024-08, Vol.59 (32), p.15435-15448
Main Authors: Jdir, M., Erouel, M., Ba, M., Chouiref, L., El Beji, M., Mansouri, S., El Mir, L.
Format: Article
Language:English
Subjects:
Carrier density
Carrier mobility
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Crystallography and Scattering Methods
Electrical properties
Electronic Materials
Field effect transistors
Illumination
Indium
Materials Science
Memory devices
Microscopy
Nanocomposites
Nanoparticles
Optical memory (data storage)
Optical properties
Optoelectronic devices
Polymer Sciences
Polymers
Semiconductor devices
Semiconductors
Solid Mechanics
Solvents
Spin coating
Thin films
Transistors
Zinc oxide
Zinc oxides
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Organic field-effect transistors (OFETs), based on poly(3-hexylthiophene) (P3HT) enriched by indium-doped zinc oxide (IZO) nanoparticles as an active layer, were successfully prepared by the spin-coating method. We report a significant impact of IZO nanoparticles on the P3HT carrier mobility, which can be controlled by IZO-level loading. The X-ray diffraction and the UV–visible analysis conducted on P3HT/IZO nanocomposite thin films showed an enhancement of the conjugated chain length. Moreover, the improvement of the P3HT properties resulted in an increase in the polymer crystallinity and a reduction of the trap density. A particular result was illustrated corresponding to the enhancement of the carrier mobility and I ON / I OFF ratio in the devices based on hybrid nanocomposite. The significant hysteresis observed in this device, which depends on IZO content and illumination under ambient conditions and renders these OFETs promising for various optoelectronic and nonvolatile memory applications. Graphical abstract
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-024-10079-8