Spatial Electroluminescence Distribution and Internal Quantum Efficiency in Substrate Free InAsSbP/InAsSb Double Heterostructure

In this work, we calculated the spatial distribution of the electroluminescence intensity taking into account the features of current spreading and taking into account the dependence of the internal quantum yield on the current density with the dominance of Auger recombination in flip-chip diodes ba...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2024-02, Vol.58 (2), p.149-154
Main Authors: Matveev, B. A., Ratushnyi, V. I., Rybal’chenko, A. Yu
Format: Article
Language:English
Subjects:
Current density
Electroluminescence
Heterostructures
Indium arsenide antimonide phosphide
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Quantum efficiency
Radiation distribution
Room temperature
Spatial distribution
Substrates
Temperature dependence
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work, we calculated the spatial distribution of the electroluminescence intensity taking into account the features of current spreading and taking into account the dependence of the internal quantum yield on the current density with the dominance of Auger recombination in flip-chip diodes based on InAsSbP/InAsSb double heterostructures (λ = 4.2 μm). By comparing the calculated data and the radiation distribution over the sample surface, the internal quantum efficiency of electroluminescence and its dependence on the current density at room temperature are determined.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782624020106