Numerical Simulation of Waveguide Propagation Loss on Directly Bonded InP/Si Substrate

This paper explores the propagation loss in waveguides on directly bonded InP/Si substrates, using numerical simulations to understand the effect of voids within the waveguide structure. Using COMSOL Multiphysics, we developed a model to simulate light propagation, focusing on how void characteristi...

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Bibliographic Details
Published in:Journal of electronic materials 2024-10, Vol.53 (10), p.6340-6347
Main Authors: Zhao, Liang, Agata, Koji, Yada, Ryosuke, Shimomura, Kazuhiko
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Design optimization
Diodes
Electronics and Microelectronics
Heterostructures
Indium phosphides
Instrumentation
Lasers
Materials Science
Multi Quantum Wells
Optical and Electronic Materials
Optical properties
Original Research Article
Photonics
Propagation
Quantum well lasers
Semiconductor lasers
Silicon substrates
Simulation
Solid State Physics
Threshold currents
Waveguides
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Description
Summary:This paper explores the propagation loss in waveguides on directly bonded InP/Si substrates, using numerical simulations to understand the effect of voids within the waveguide structure. Using COMSOL Multiphysics, we developed a model to simulate light propagation, focusing on how void characteristics such as diameter and angle influence the propagation loss. Our findings reveal a correlation between void dimensions and the increased threshold current density in separate confinement heterostructure multiple quantum well laser diodes, thereby providing insights into optimizing waveguide design for enhanced laser performance on InP/Si substrates. This research underscores the critical role of substrate bonding quality in minimizing internal losses and improving device efficiency.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-024-11318-z