Top-Down Formation of Biocompatible SiC Nanotubes

It was found that the synthesis of silicon carbide epitaxial layers on silicon by coordinated substitution of atoms can be accompanied by the formation of silicon carbide nanotubes growing deep into silicon substrates. That is, for the first time discovered a new “top-down” mechanism for the formati...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2024-03, Vol.58 (3), p.209-213
Main Authors: Bouravleuv, A. D., Kazakin, A. N., Nashchekina, Yu. A., Nashchekin, A. V., Ubyyvovk, E. V., Astrahanceva, V. A., Osipov, A. V., Svyatec, G. V., Kukushkin, S. A.
Format: Article
Language:English
Subjects:
Biocompatibility
Epitaxial growth
Epitaxial layers
Magnetic Materials
Magnetism
Nanotubes
Physics
Physics and Astronomy
Silicon carbide
Silicon substrates
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Summary:It was found that the synthesis of silicon carbide epitaxial layers on silicon by coordinated substitution of atoms can be accompanied by the formation of silicon carbide nanotubes growing deep into silicon substrates. That is, for the first time discovered a new “top-down” mechanism for the formation of silicon carbide nanotubes.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782624030035