Study of the Influence of the Energy of Argon Ions on the Surface Roughness of the Main Sections of Single-Crystal Silicon

The paper presents the results of studying the energy dependences of the sputtering yields and the value of the effective surface roughness of single-crystal silicon upon irradiation with argon ions with an energy of 200–1000 eV. As a result of the work, the parameters of ion-beam etching with accel...

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Bibliographic Details
Published in:Technical physics 2024, Vol.69 (4), p.959-963
Main Authors: Mikhailenko, M. S., Pestov, A. E., Chernyshev, A. K., Zorina, M. V., Chkhalo, N. I., Salaschenko, N. N.
Format: Article
Language:English
Subjects:
Argon ions
Classical and Continuum Physics
Etching
Free electron lasers
Frequency ranges
Ion beams
Physics
Physics and Astronomy
Silicon
Single crystals
Sputtering
Surface roughness
Citations: Items that this one cites
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Summary:The paper presents the results of studying the energy dependences of the sputtering yields and the value of the effective surface roughness of single-crystal silicon upon irradiation with argon ions with an energy of 200–1000 eV. As a result of the work, the parameters of ion-beam etching with accelerated Ar ions were determined, providing a high sputtering yield (etching rate) and an effective roughness value in the spatial frequency range 4 . 9 × 10 –2 –6 . 3 × 10 1 µm –1 less than 0.3 nm for the main cuts monocrystalline silicon 〈100〉, 〈110〉, and 〈111〉.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784224030265